Abstract: An optical element for effecting a desired change in incident radiation at a plane of an illumination system of a lithographic apparatus comprises an array of cells manufactured as a single unit, each cell being arranged to redirect the incident radiation in a predetermined direction. An array of polarizing regions is also provided, each polarizing region being associated with a corresponding cell. Each cell arranged to redirect radiation in a first direction has associated with it a polarizing region ensuring that the redirected radiation has a first polarization, so that all of the radiation redirected in the first direction has the same polarization.

Abstract: Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.

Abstract: A lithographic apparatus includes an illumination system configured to provide a radiation beam; a patterning device configured to pattern the radiation beam to form a patterned radiation beam; and a projection system configured to project the patterned radiation beam onto a substrate. An optical assembly includes multiple optical elements two-dimensionally arranged between a radiation source and the patterning device to create a predetermined angular distribution of the radiation beam. In order to improve the uniformity of the radiation beam the optical elements are selected from a predetermined number of optical elements having different shapes and/or sizes.

Abstract: A lithographic apparatus comprises an illumination system for providing a projection beam of radiation, a support structure for supporting patterning device, the patterning device serving to transmit or reflect radiation in the projection beam and impart the projection beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned beam onto a target portion of the substrate. A sensor is provided for measuring the spatial intensity distribution of the projection beam at the substrate. The spatial distribution of transmission or reflectance of the patterning device, together with the distribution of the projection beam incident on the patterning device, may be determined from the measured intensity distribution. By comparing the transmission or reflectance from regions having identical patterns the overall (macroscopic) distribution of the transmission or reflectance of the patterning device can be determined.

Abstract: A method for minimizing rippling of features when imaged on a surface of a substrate using a mask. The method includes the steps of determining a deviation between a first representation of the design and a second representation of an image of the design at each of a plurality of evaluation points for each section of a plurality of sections of the design; determining an amount of modification of the design at each section based on an evaluation of the plurality of evaluation points; and modifying the design at each section by the amount determined in the previous step.

Abstract: Disclosed is a method of optimizing a design to be formed on a substrate. The method includes approximating rounding of at least one corner of an image of the design; generating a representation of the design further to the approximate rounding of the at least one corner; generating an initial representation of a mask utilized to image the design based on the representation; and performing Optical Proximity Correction (OPC) further to the initial representation of the mask.

Abstract: A radiation system includes a radiation generator to generate a beam of radiation, a source, and an illumination system configured to receive the beam of radiation and provide a projection beam of radiation. The illumination system includes a beam measuring system configured measure at least one of position and tilt of the beam of radiation relative to the illumination system and a projecting device configured to redirect only a part of a cross section of the beam of radiation to the beam measuring system. The beam measuring system may include several position sensors, the readouts of which can be used to determine incorrect alignment of the radiation source with respect to the illumination system. Diaphragms are connected to the collector of the radiation generator, so that in addition to X, Y, and Z corrections, Rx, Ry and Rz corrections are possible.

Abstract: A lithographic apparatus includes an illumination system including a field faceted mirror including a plurality of field facets and configured to receive radiation from a radiation source and form a plurality of images of the radiation source on corresponding pupil facets of a pupil faceted mirror. Each of the field facets is configured to provide an illumination slit at a level of a patterning device. The illumination slits are summed together at the level of the patterning device to illuminate the patterning device. First blades are configured to block radiation from a radiation source and each first blade is selectively actuable to cover a portion of a selectable number of field facets. The field faceted mirror further comprises partial field facets, the partial field facets being configured to produce a partial illumination slit at the level of the patterning device, and the pupil faceted mirror further includes pupil facets corresponding to the partial field facets.

Abstract: A device manufacturing method, is presented herein. In one embodiment, the device manufacturing method includes a mask for use with DUV having a quartz substrate and chrome absorber. The chrome absorber has a thickness of about 700 nm which causes increased TE polarization in the transmitted light and improves contrast at the substrate level.