Abstract: The invention relates to a substrate holding and locking system for chemical and/or electrolytic surface treatment of a substrate in a process fluid and a corresponding method. The system comprises a first element, a second element, a reduced pressure holding unit and a magnetic locking unit. The first element and the second element are configured to hold the substrate between each other. The reduced pressure holding unit comprises a pump to reduce an interior pressure inside the substrate holding and locking system below atmospheric pressure. The magnetic locking unit is configured to lock the first element and the second element with each other. The magnetic locking unit comprises a magnet control and at least a magnet. The magnet is arranged at one of the first element and the second element. The magnet control is configured to control a magnetic force between the first element and the second element.

Abstract: The invention relates to a substrate holding and locking system for chemical and/or electrolytic surface treatment of a substrate in a process fluid and a corresponding method. The system comprises a first element, a second element, a reduced pressure holding unit and a magnetic locking unit. The first element and the second element are configured to hold the substrate between each other. The reduced pressure holding unit comprises a pump to reduce an interior pressure inside the substrate holding and locking system below atmospheric pressure. The magnetic locking unit is configured to lock the first element and the second element with each other. The magnetic locking unit comprises a magnet control and at least a magnet. The magnet is arranged at one of the first element and the second element. The magnet control is configured to control a magnetic force between the first element and the second element.

Abstract: A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.

Abstract: A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-controlled first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Abstract: A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.

Abstract: A device for carrying out a CVD process comprises a gas inlet element, which is arranged in a reactor housing and has a gas outlet plate, which faces a process chamber, comprises a porous material and has a multiplicity of gas outlet openings, which are fed with process gases from a gas distributing volume arranged in the gas inlet element. In order to improve production aspects of a gas inlet element, in particular for a CVD reactor with a large coating area, it is proposed that the porous material forms the core of the gas outlet plate, the surface segments of which that come into contact with the process gas are sealed.

Abstract: A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-control led first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Abstract: A device for carrying out a CVD process comprises a gas inlet element, which is arranged in a reactor housing and has a gas outlet plate, which faces a process chamber, comprises a porous material and has a multiplicity of gas outlet openings, which are fed with process gases from a gas distributing volume arranged in the gas inlet element. In order to improve production aspects of a gas inlet element, in particular for a CVD reactor with a large coating area, it is proposed that the porous material forms the core of the gas outlet plate, the surface segments of which that come into contact with the process gas are sealed.

Abstract: The invention relates to a device for depositing laterally structured layers on a substrate (2) situated on a substrate support (1), using a shadow mask (3) lying flat on the substrate surface (2?) to be coated, the substrate support (1) having first magnetic zones (4) for magnetically attracting second magnetic zones (5) of the shadow mask (3) that are associated with these first magnetic zones (4), wherein, before coating the substrate (2) and when the shadow mask (3) is lying on the substrate (2), the first magnetic zones (4) may be brought into an active position in which the second magnetic zones (5) are drawn toward the substrate surface (2?), and, for placement or removal of the shadow mask (3), the first magnetic zones may be brought into an inactive position in which the attractive force acting on the second magnetic zones (5) is reduced.

Abstract: The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7?) of a substrate (7) which lies on a supporting surface (4?) of a susceptor, said supporting surface (4?) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4?) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4?) is lower than the temperature (TG) of the gas inlet element (3).

Abstract: A device for treating a substrate (12) includes a conveying device (13) for loading and unloading substrates or masks (10, 10?, 10?, 10??) into and from a process chamber (1) through loading openings (6, 7). A shielding plate (11), used to shield the substrate (12) or the mask (10) from the influence of heat is moved between a shielding position and a storage position during the substrate treatment and, after the substrate (12) is treated, from the storage position back into the shielding position. In the storage position, the shielding plate (11) is situated inside a storage chamber (2, 3).

Abstract: The invention relates to an apparatus and a method for depositing one or more thin layers of polymeric para-xylylene. Said apparatus comprises a heated evaporator (1) used for evaporating a solid or liquid starting material. A supply pipe (11) for a carrier gas extends into said evaporator (1). The carrier gas conducts the evaporated starting material, in particular the evaporated polymer, into a pyrolysis chamber (2) which is located downstream of the evaporator (1) and in which the starting material is decomposed. The apparatus further comprises a deposition chamber (8) which is located downstream of the decomposition chamber (2) and encompasses a gas inlet (3) through which the decomposed product conducted by the carrier gas is admitted, a susceptor (4) which has a supporting surface (4?) opposite the gas inlet (3) in order to support a substrate (7) that is to be coated with the polymerized decomposed product, and a gas outlet (5).

Abstract: The invention relates to a device for depositing laterally structured layers on a substrate (2) situated on a substrate support (1), using a shadow mask (3) lying flat on the substrate surface (2?) to be coated, the substrate support (1) having first magnetic zones (4) for magnetically attracting second magnetic zones (5) of the shadow mask (3) that are associated with these first magnetic zones (4), wherein, before coating the substrate (2) and when the shadow mask (3) is lying on the substrate (2), the first magnetic zones (4) may be brought into an active position in which the second magnetic zones (5) are drawn toward the substrate surface (2?), and, for placement or removal of the shadow mask (3), the first magnetic zones may be brought into an inactive position in which the attractive force acting on the second magnetic zones (5) is reduced.

Abstract: The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7?) of a substrate (7) which lies on a supporting surface (4?) of a susceptor, said supporting surface (4?) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4?) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4?) is lower than the temperature (TG) of the gas inlet element (3).

Abstract: The invention relates to a device for the vaporisation of condensed (solid or liquid) materials, in particular, of starting materials for OLED production, comprising a container (1), for housing the material with a gas supply line (2) and a gas exhaust line (3). A number of inserts (4) for housing the material are arranged in the container (1) which have an individual flow thereover, whereby the inserts (4) are arranged one over the other in the vertical direction and comprise recesses (5) for housing the material in the horizontal direction over which a flow is possible. Several gas flows may flow in parallel over several inserts.