Abstract: Various embodiments describe an integrated circuit. The integrated circuit includes at least seven planar field effect transistors provided in a common substrate next to one another with a maximum feature size in accordance with a technology node of a maximum of 65 nm. Each field effect transistor of the at least seven planar field effect transistors includes a first source/drain diffusion region, a second source/drain diffusion region, a channel region between the drain diffusion region and the source diffusion region, and a gate terminal. Each field effect transistor of the at least seven planar field effect transistors includes at least one common source/drain diffusion region with another field effect transistor of the at least seven planar field effect transistors. The common source/drain diffusion regions are free of vertical terminal contact material.