Abstract: A method for the ultrasensitive simultaneous measurement of nonlinear optical emission signals in one or two local dimensions wherein excitation light is irradiated in modulated form from at least one light source into an interactive space in which one or several emissions that are nonlinearly correlated with the excitement light can be excited. The light emanating from the interactive spaces is measured using a one or two-dimensional detector array. Measured data is then transmitted to a computer and formatted in a one or two-dimensional data matrix. Further, non-correlated portions of the light emanating from the interactive spaces that are linearly proportionate to the intensity of the excitement light available in the interactive spaces are separated from portions of the light emanating from the interactive spaces which are not linearly proportionate. The invention also relates to an analytical system for carrying out this method.

Abstract: The invention relates to a method for the ultrasensitive simultaneous measurement of nonlinear optical emission signals in one or two local dimensions. Said method comprises the following steps: the excitation light is irradiated in a power-modulated or pulse-modulated form from at least one light source into an interactive volume or onto an interactive area or layer (hereafter called interactive spaces) in which one or several emissions that are nonlinearly correlated with the excitement light can be excited; the light emanating from said interactive spaces is measured by means of a one-dimensional or two-dimensional detector array; the measured data is transmitted from said detector array to a computer, and said data is formatted in a one-dimensional or two-dimensional data matrix.

Abstract: Essentially non-linear optical material characteristics of a semiconductor material grown at low temperatures can be significantly improved by the following measures: Doping with foreign atoms and/or additional thermal annealing. If, for example GaAs grown at 300° C. is doped with Be to a concentration of 3·1019 cm−3, then the response time is reduced from 480 fs (curve 1.1) to 110 fs (curve 3.1), without the absorption modulation being reduced by this or the non-saturable absorption losses being increased. Semiconductor materials, during the production of which at least one of the above measures was implemented, manifest influenceable, in particular short response times as well as simultaneously high absorption modulations and low non-saturable absorption losses. For this reason, they are eminently suitable for non-linear optical applications, such as optical information processing, optical communication or ultrashort laser pulse physics.