Abstract: A capacitor structure implemented as a layered structure including a plurality of alternating dielectric and metallization layers, and a method of manufacturing such capacitor structure. The capacitor structure including at least one lateral parallel plate capacitor part (LPP part) including two first electrodes on two different layers separated by dielectric material of a plurality of the alternating layers, and at least one vertical parallel plate capacitor part (VPP part) including two second electrodes each including a plurality of superimposed slabs or bars arranged on a plurality of the metallization layers. The at least one LPP part is electrically coupled with the at least one VPP part to form the capacitor structure. A variation in capacitance value of the at least one LPP part due to a variation of thickness of dielectric material is at least partially compensated by an opposite variation in capacitance value of the at least one VPP part.

Abstract: A capacitor structure implemented using a semiconductor process. The capacitor structure includes a plurality of interdigitated positive and negative electrode fingers separated by a dielectric material, and a plurality of patterned metallization layers separated by the dielectric material. Each interdigitated electrode finger comprises a lateral part formed on one of at least two essentially parallel first metallization layers and a vertical part includes a plurality of superimposed slabs or bars disposed on a plurality of second metallization layers between said first metallization layers and electrically connected to each other and to the lateral part with a plurality of electrically conducting vias traversing through dielectric material separating adjacent metallization layers. Vertical distance between each pair of at least partially superimposed lateral parts of two adjacent electrode fingers is substantially equal to lateral distance between two adjacent vertical parts.

Abstract: A capacitor structure implemented using a semiconductor process. The capacitor structure includes a plurality of interdigitated positive and negative electrode fingers separated by a dielectric material, and a plurality of patterned metallization layers separated by the dielectric material. Each interdigitated electrode finger comprises a lateral part formed on one of at least two essentially parallel first metallization layers and a vertical part includes a plurality of superimposed slabs or bars disposed on a plurality of second metallization layers between said first metallization layers and electrically connected to each other and to the lateral part with a plurality of electrically conducting vias traversing through dielectric material separating adjacent metallization layers. Vertical distance between each pair of at least partially superimposed lateral parts of two adjacent electrode fingers is substantially equal to lateral distance between two adjacent vertical parts.

Abstract: A capacitor structure implemented as a layered structure including a plurality of alternating dielectric and metallization layers, and a method of manufacturing such capacitor structure. The capacitor structure including at least one lateral parallel plate capacitor part (LPP part) including two first electrodes on two different layers separated by dielectric material of a plurality of the alternating layers, and at least one vertical parallel plate capacitor part (VPP part) including two second electrodes each including a plurality of superimposed slabs or bars arranged on a plurality of the metallization layers. The at least one LPP part is electrically coupled with the at least one VPP part to form the capacitor structure. A variation in capacitance value of the at least one LPP part due to a variation of thickness of dielectric material is at least partially compensated by an opposite variation in capacitance value of the at least one VPP part.