Abstract: A method and an apparatus for determining the heating state of an optical element in a microlithographic optical system involves at least one contactless sensor which is based on the reception of electromagnetic radiation from the optical element. The radiation range captured by the sensor is varied for the purposes of ascertaining a temperature distribution in the optical element.

Abstract: The disclosure provides a method for determining at least one property of an EUV source in a projection exposure apparatus for semiconductor lithography, wherein the property is determined on the basis of the electromagnetic radiation emanating from the EUV source, and wherein a thermal load for a component of the projection exposure apparatus is determined and the property is deduced on the basis of the thermal load determined.

Abstract: A method and an apparatus for determining the heating state of an optical element in a microlithographic optical system involves at least one contactless sensor which is based on the reception of electromagnetic radiation from the optical element. The radiation range captured by the sensor is varied for the purposes of ascertaining a temperature distribution in the optical element.

Abstract: A displacement device for pivoting a mirror element with two degrees of freedom of pivoting includes an electrode structure including actuator electrodes. The actuator electrodes are comb electrodes. All actuator electrodes are arranged in a single plane. The actuator electrodes form a direct drive for pivoting the mirror element.

Abstract: The disclosure provides a method for determining at least one property of an EUV source in a projection exposure apparatus for semiconductor lithography, wherein the property is determined on the basis of the electromagnetic radiation emanating from the EUV source, and wherein a thermal load for a component of the projection exposure apparatus is determined and the property is deduced on the basis of the thermal load determined.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A sensor device for capturing the displacement position of an optical component includes a plurality of stator electrodes and a mechanism or restricting the electric field that is relevant to the measurement of the displacement position to the region of the stator electrodes.

Abstract: The disclosure relates to a device for transmitting electrical signals between a first interface element, arranged at a first structure of a lithography system, and a second interface element, arranged at a second structure of the lithography system. An electrical conductor connects the first interface element and the second interface element. The device has a hollow body which surrounds at least sections of the electrical conductor and which is designed to electromagnetically shield the electrical conductor. A gap is provided in the hollow body or between the hollow body and one of the structures and allows a relative movement of the first structure and the second structure to mechanically decouple the first structure from the second structure.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A method for illuminating an object field of a projection exposure apparatus includes providing a subset of first facets to be positioned in park positions, which are each spaced apart from an associated target position, but at most by a maximum distance.

Abstract: A sensor device for capturing the displacement position of an optical component includes a plurality of stator electrodes and a mechanism or restricting the electric field that is relevant to the measurement of the displacement position to the region of the stator electrodes

Abstract: The disclosure relates to a device for transmitting electrical signals between a first interface element, arranged at a first structure of a lithography system, and a second interface element, arranged at a second structure of the lithography system. An electrical conductor connects the first interface element and the second interface element. The device has a hollow body which surrounds at least sections of the electrical conductor and which is designed to electromagnetically shield the electrical conductor. A gap is provided in the hollow body or between the hollow body and one of the structures and allows a relative movement of the first structure and the second structure to mechanically decouple the first structure from the second structure.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: The invention relates to an arrangement for actuating an element in an optical system, in particular an optical system of a projection exposure apparatus, wherein the optical element is tiltable about at least one tilting axis via at least one joint having a joint stiffness, comprising at least one actuator for exerting a force on the optical element, wherein the actuator has an actuator stiffness which at least partly compensates for the joint stiffness.

Abstract: The invention relates to a projection exposure apparatus for semiconductor lithography, comprising an illumination system for illuminating a mask arranged on a movable mask stage, and comprising a projection lens for imaging the mask onto a semiconductor substrate, wherein at least one means is present for at least partly decoupling at least parts of the illumination system and/or of the projection lens from the influence of pressure fluctuations in the medium surrounding the projection lens or the illuminated system, the pressure fluctuations being attributed to movements of the mask stage during the operation of the apparatus.

Abstract: The disclosure relates to arrangements for manipulating the position of an element. An arrangement according has at least one actuator for each degree of freedom of the positional manipulation for exerting adjustable forces on the element, at least one position sensor for each degree of freedom of the positional manipulation for generating in each case a sensor signal that is characteristic of the position of the element, and at least one position controller, which in a position control circuit controls a force exerted on the element by the at least one actuator for the positioning of the element in dependence on the at least one sensor signal. At least one actuator and at least one position sensor are mounted on a common module frame.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A mirror device includes at least one electrically conductive shielding element, which forms a mechanism for producing an electric field in a region adjacent to at least one side surface and/or a rear side of a mirror body.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A lithography device includes an eddy-current brake for damping the movement of a structural element of the lithography device. The eddy-current brake includes a plurality of magnets disposed in an arc-shaped arrangement, and a plurality of electrically conductive sheets arranged respectively between adjacent ones of the magnets. A relative movement between the magnets and the electrically conductive sheets in a direction to be damped inducing eddy currents in the electrically conductive sheets.