Patents by Inventor Markus Hellenbrand

Markus Hellenbrand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive switching devices and methods for their manufacture and operation
    Patent number: 12787662
    Abstract: A resistive switching memory device comprises an active layer comprising an ionic conducting material. The active layer is disposed on a substrate. The device further comprises: a first electrode, a second electrode and optionally a first semiconductor layer. One of the first electrode, second electrode and first semiconductor layer, when present, is the substrate for the active layer and wherein the active layer and the first semiconductor layer, when present, contact each other at an interface. The device exhibits hysteretic I-V behaviour to permit switching of the electrical resistance of the device between different resistance states. The active layer is non-epitaxial with respect to the substrate.
    Type: Grant
    Filed: March 8, 2023
    Date of Patent: November 3, 2026
    Assignee: Cambridge Enterprise Limited
    Inventors: Ming Xiao, Judith Driscoll, Markus Hellenbrand
  • Resistive Switching Devices and Methods for their Manufacture and Operation
    Publication number: 20250176446
    Abstract: A resistive switching memory device comprises an active layer comprising an ionic conducting material. The active layer is disposed on a substrate. The device further comprises: a first electrode, a second electrode and optionally a first semiconductor layer. One of the first electrode, second electrode and first semiconductor layer, when present, is the substrate for the active layer and wherein the active layer and the first semiconductor layer, when present, contact each other at an interface. The device exhibits hysteretic I-V behaviour to permit switching of the electrical resistance of the device between different resistance states. The active layer is non-epitaxial with respect to the substrate.
    Type: Application
    Filed: March 8, 2023
    Publication date: May 29, 2025
    Inventors: Ming Xiao, Judith Driscoll, Markus Hellenbrand