Patents by Inventor Markus Huebl

Markus Huebl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12665590
    Abstract: A current limitation concept for an intelligent semiconductor switch is described herein. In accordance with one embodiment, a method performed by the intelligent semiconductor switch comprises generating a gate current and switching on a power transistor by applying the gate current to the gate electrode of the power transistor. The method further comprises determining information regarding a load current passing through the power transistor and controlling—based on the information regarding the load current—the load current by reducing the gate current applied to the gate electrode of the power transistor. When the load current exceeds a first threshold value, the gate current is reduced by a specific amount, and when the load current exceeds a third threshold value, the gate current is further reduced by sinking a discharge current, which has a third current level, from the gate electrode of the power transistor.
    Type: Grant
    Filed: December 4, 2023
    Date of Patent: June 23, 2026
    Assignee: Infineon Technologies AG
    Inventors: Christian Djelassi-Tscheck, Alexander Mayer, Mario Tripolt, Vincent Thiery, Markus Huebl, Bernhard Auer
  • Publication number: 20240204766
    Abstract: A current limitation concept for an intelligent semiconductor switch is described herein. In accordance with one embodiment, a method performed by the intelligent semiconductor switch comprises generating a gate current and switching on a power transistor by applying the gate current to the gate electrode of the power transistor. The method further comprises determining information regarding a load current passing through the power transistor and controlling—based on the information regarding the load current—the load current by reducing the gate current applied to the gate electrode of the power transistor. When the load current exceeds a first threshold value, the gate current is reduced by a specific amount, and when the load current exceeds a third threshold value, the gate current is further reduced by sinking a discharge current, which has a third current level, from the gate electrode of the power transistor.
    Type: Application
    Filed: December 4, 2023
    Publication date: June 20, 2024
    Inventors: Christian Djelassi-Tscheck, Alexander Mayer, Mario Tripolt, Vincent Thiery, Markus Huebl, Bernhard Auer
  • Patent number: 7477498
    Abstract: Embodiments of the invention relate to an integrated circuit, a protective circuit and a method of operating a protective circuit. One embodiment includes an electrical line, a holding circuit, a control circuit and a protective element, wherein the holding circuit, the control circuit and the protective element are selectively connected to the electrical line. The protective element is selectively connected to the electrical line to, discharge the electrical line, depending on the respective states of the holding circuit and the control circuit.
    Type: Grant
    Filed: June 25, 2007
    Date of Patent: January 13, 2009
    Assignee: Qimonda AG
    Inventor: Markus Huebl
  • Publication number: 20080002323
    Abstract: Embodiments of the invention relate to an integrated circuit, a protective circuit and a method of operating a protective circuit. One embodiment includes an electrical line, a holding circuit, a control circuit and a protective element, wherein the holding circuit, the control circuit and the protective element are selectively connected to the electrical line. The protective element is selectively connected to the electrical line to, e.g., discharge the electrical line, depending on the respective states of the holding circuit and the control circuit.
    Type: Application
    Filed: June 25, 2007
    Publication date: January 3, 2008
    Inventor: Markus Huebl