Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib) wherein A1, A2, A3 and A4 are independently selected from CO, SO2 or POR1; R1=electron withdrawing gro

Abstract: The present invention relates to an organic electronic device or an organic semiconducting material comprising a borane compound a borane compound, the borane compound comprising at least one boron atom in the oxidation state (III) and at least one anionic ligand, the anionic ligand having the formula (Ia) or (Ib) wherein in the formulas (Ia) and (Ib) A1 to A6 are independently selected from the group consisting of CO, SO2 or PDX1; X1 is independently selected from the group consisting of halide, nitrile, halogenated or perhalogenated C1 to C20 alkyl, halogenated or perhalogenated C6 to C20 aryl, and halogenated or perhalogenated heteroaryl having 5 to 20 ring-forming atoms; and R1 to R6 are independently selected from the group consisting of substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C1 to C20 heteroalkyl, substituted or unsubstituted C6 to C20 aryl, and substituted or unsubstituted C5 to C20 heteroaryl, wherein it may be provided that R1 and R2 are linked to each other to

Abstract: The present invention relates to a display device comprising—a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers—is arranged between and in contact with the cathode and the anode, and—comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and—a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neu

Abstract: The present Invention relates to an organic light emitting device comprising: (i) an anode; (ii) a cathode; (iii) at least one light emitting layer arranged between the anode and the cathode; (iv) optionally a first hole injection layer comprising a first hole injection compound, the first hole injection layer being arranged between the anode and the light emitting layer and the hole injection layer being adjacent to the anode; (v) a first hole transport layer comprising a first hole transport matrix compound wherein the first hole transport layer is arranged a) between the first hole injection layer and the light emitting layer and adjacent to the first hole injection layer; or b) between the anode and the light emitting layer and adjacent to the anode; (vi) a second hole injection layer arranged between the first hole transport layer and the light emitting layer, wherein the second hole injection layer is adjacent to the first hole transport layer and wherein the second hole injection layer comprises a seco

Abstract: The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

Abstract: The present invention relates to a hole injection layer for an OLED comprising a triarylamine compound doped with a charge neutral metal amide compound, characterized in that the hole injection layer has a thickness of at least about ?20 nm to about ?1000 nm and the charge neutral metal amide compound has the Formula Ia.

Abstract: The present invention relates to an electronic device comprising a hole injection layer and/or a hole transport layer and/or a hole generating layer, wherein at least one of the hole injection layer, the hole transport layer and the hole generating layer comprises a coordination complex comprising at least one electropositive atom M having an electronegativity value according to Allen of less than 2.4 and at least one ligand L having the following structure: (I) wherein R1 and R2 are independently selected from the group, consisting of C1 to C30 hydrocarbyl groups and C2 to C30 heterocyclic groups, wherein R1 and/or R2 may optionally be substituted with at least one of CN, F, Cl, Br and I.

Abstract: The present invention relates to an organic electronic device comprising at least one inverse coordination complex, the N inverse coordination complex comprising: (i) a core consisting of one atom or of a plurality of atoms forming together a covalent cluster; (ii) a first coordination sphere consisting of at least four electropositive atoms having each individually an electronegativity according to Allen of less than 2,4; and (iii) a second coordination sphere comprising a plurality of ligands; wherein the first coordination sphere is closer to the core than the second coordination sphere; and all atoms of the core have a higher electronegativity according to Allen than any of the electropositive atoms of the first coordination sphere and a method for preparing the same.

Abstract: The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

Abstract: The present invention relates to an organic electronic device or an organic semiconducting material comprising a borane compound a borane compound, the borane compound comprising at least one boron atom in the oxidation state (III) and at least one anionic ligand, the anionic ligand having the formula (Ia) or (Ib) wherein in the formulas (Ia) and (Ib) A1 to A6 are independently selected from the group consisting of CO, SO2 or PDX1; X1 is independently selected from the group consisting of halide, nitrile, halogenated or perhalogenated C1 to C20 alkyl, halogenated or perhalogenated C6 to C20 aryl, and halogenated or perhalogenated heteroaryl having 5 to 20 ring-forming atoms; and R1 to R6 are independently selected from the group consisting of substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C1 to C20 heteroalkyl, substituted or unsubstituted C6 to C20 aryl, and substituted or unsubstituted C5 to C20 heteroaryl, wherein it may be provided that R1 and R2 are linked to each other to

Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (1a) or (1b) wherein A1, A2, A3 and A4 are independently selected from CO, SO2 or POR1; R1=electron withdrawing gro

Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib)

Abstract: The present invention relates to an electronic device comprising at least one layer comprising a borate salt, wherein the borate salt is comprised in the layer comprising the borate salt In an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the layer, a display device comprising the same and a method for preparing the same.

Abstract: The present invention relates to a display device comprising—a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers—is arranged between and in contact with the cathode and the anode, and—comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and—a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neu

Abstract: The present invention relates to an electronic device comprising, between a first electrode and a second electrode, at least one hole injection layer and/or at least one hole generating layer, wherein the hole injection layer and/or the hole generating layer consists of a bismuth carboxylate complex, and a to a method for preparing the same.

Abstract: Provided are processes for preparing an electrically doped semiconducting material that includes a [3]-radialene p-dopant. Also provided are processes for preparing an electronic device containing a layer that includes a [3]-radialene p-dopant. The processes may include (i) loading an evaporation source with a [3]-radialene p-dopant and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure. The [3]-radialene p-dopant may be selected from compounds having a structure according to formula (I) herein.

Abstract: The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia.

Abstract: The present invention relates to a hole injection layer for an OLED comprising a triarylamine compound doped with a charge neutral metal amide compound, characterized in that the hole injection layer has a thickness of at least about ?20 nm to about ?1000 nm and the charge neutral metal amide compound has the Formula Ia.

Abstract: The present invention relates to a process for preparation of an electrically doped semiconducting material comprising a [3]-radialene p-dopant or for preparation of an electronic device containing a layer comprising a [3]-radialene p-dopant, the process comprising the steps: (i) loading an evaporation source with the [3]-radialene p-dopant; and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure, wherein the [3]-radialene p-dopant is selected from compounds having a structure according to formula (I) wherein A1 and A2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A1 and A2 from 4-cyano-2,3,5,6-tetrafluorphenyl,2,3,5,6-tetrafluorpyridine-4-yl, 4-trifluormethyl-2,3,5,6-tetrafluorphenyl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-tris(trifluormethyl)-1,3-diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6-trifluorpyridi