Abstract: Various teachings of the present disclosure include a method for welding an attachment piece to a semiconductor metallization using laser welding. The method may include: arranging an attachment piece having a flat side with a thin point so the flat side faces the semiconductor metallization; and welding the flat side to the semiconductor metallization. The flat side rests against a flat side of the semiconductor metallization over an entire surface area of the flat side. The thin point is formed with a cup shape of the attachment piece. The cup shape is open in the direction away from the semiconductor metallization.

Abstract: An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Abstract: An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Abstract: Various embodiments of the teachings herein include an electronic module comprising: a circuit carrier with an electrically conductive thick film with a thickness of at least 0.5 millimeter; and a plurality of thermally conductive elements connected to one another by a thermally conductive material. The thermally conductive elements have a base area with rotational symmetry.

Abstract: Various teachings of the present disclosure include a method for welding an attachment piece to a semiconductor metallization using laser welding. The method may include: arranging an attachment piece having a flat side with a thin point so the flat side faces the semiconductor metallization; and welding the flat side to the semiconductor metallization. The flat side rests against a flat side of the semiconductor metallization over an entire surface area of the flat side. The thin point is formed with a cup shape of the attachment piece. The cup shape is open in the direction away from the semiconductor metallization.

Abstract: Various embodiments of the teachings herein include an electronic module comprising: a circuit carrier with an electrically conductive thick film with a thickness of at least 0.5 millimeter; and a plurality of thermally conductive elements connected to one another by a thermally conductive material. The thermally conductive elements have a base area with rotational symmetry.

Abstract: The disclosure relates to an arrangement with a power module including power semiconductor components. The arrangement further includes a component having a curved surface. The power module is arranged on the curved surface of the component and is non-positively detachably connected to the component. The disclosure also relates to a power converter with the arrangement and to a vehicle with a power converter.

Abstract: The invention relates to an arrangement for a power converter (12) comprising at least one power module (1) comprising power semiconductor components (5) and a cooler (10), wherein the cooler (10) has a curved surface and the power module (1) is arranged on the surface and is connected in a positive fit to the cooler (10). The invention also relates to an associated manufacturing method as well as to a power converter with said type of arrangement and to a vehicle with a power converter.