Abstract: Radiation receiver apparatus with a radiation receiver and a radiation entrance face, wherein the radiation receiver includes an active region that detects radiation with a target wavelength in the near-infrared, an optical element is arranged between the radiation entrance face and the radiation receiver, an optical axis of the optical element extends through the radiation receiver, the optical element is shaped and arranged relative to the radiation receiver such that, of radiation incident on the radiation entrance face at an angle of greater than or equal to 40° to the optical axis, at most 10% is incident on the radiation receiver, and a visible light filter is formed between the radiation receiver and the radiation entrance face.

Abstract: Radiation receiver apparatus with a radiation receiver and a radiation entrance face, wherein the radiation receiver includes an active region that detects radiation with a target wavelength in the near-infrared, an optical element is arranged between the radiation entrance face and the radiation receiver, an optical axis of the optical element extends through the radiation receiver, the optical element is shaped and arranged relative to the radiation receiver such that, of radiation incident on the radiation entrance face at an angle of greater than or equal to 40° to the optical axis, at most 10% is incident on the radiation receiver, and a visible light filter is formed between the radiation receiver and the radiation entrance face.

Abstract: A method for producing a plurality of optoelectronic semiconductor components in combination is specified. A plurality of radiation-emitting and radiation-detecting semiconductor chips are applied on a carrier substrate. The semiconductor chips are potted with a respective potting compound. The potting compounds are subsequently severed by sawing between adjacent semiconductor chips. A common frame is subsequently applied to the carrier substrate The common frame has a plurality of chambers open toward the top. The frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the frame. A semiconductor component produced in such a way and the use of the semiconductor component are furthermore specified.

Abstract: A method for producing a plurality of optoelectronic semiconductor components in combination is specified. A plurality of radiation-emitting and radiation-detecting semiconductor chips are applied on a carrier substrate. The semiconductor chips are potted with a respective potting compound. The potting compounds are subsequently severed by sawing between adjacent semiconductor chips. A common frame is subsequently applied to the carrier substrate The common frame has a plurality of chambers open toward the top. The frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the frame. A semiconductor component produced in such a way and the use of the semiconductor component are furthermore specified.