Patents by Inventor Markus NEUBER

Markus NEUBER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer
    Patent number: 10566426
    Abstract: A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: February 18, 2020
    Assignee: Infineon Technologies AG
    Inventors: Anton Mauder, Oliver Hellmund, Peter Irsigler, Jens Peter Konrath, David Laforet, Maik Langner, Markus Neuber, Hans-Joachim Schulze, Ralf Siemieniec, Knut Stahrenberg, Olaf Storbeck
  • FORMING SILICON OXIDE LAYERS BY RADICAL OXIDATION AND SEMICONDUCTOR DEVICE WITH SILICON OXIDE LAYER
    Publication number: 20180175150
    Abstract: A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.
    Type: Application
    Filed: December 20, 2017
    Publication date: June 21, 2018
    Applicant: Infineon Technologies AG
    Inventors: Anton MAUDER, Oliver HELLMUND, Peter IRSIGLER, Jens Peter KONRATH, David LAFORET, Maik LANGNER, Markus NEUBER, Hans-Joachim SCHULZE, Ralf SIEMIENIEC, Knut STAHRENBERG, Olaf STORBECK