Abstract: The present invention relates to a surface-emitting laser diode with an active amplifying region (2) which is bounded by two laser mirrors (1, 3), while one or more polarization-selective layers (4) are provided for stabilizing the polarization in a region that is located on that side of at least one of the laser mirrors (1, 3) that is opposite the active amplifying region (2), these layers (4) extending parallel to the respective mirror (1; 3) and having a polarization-dependent refractive index and/or absorption.

Abstract: The present invention relates to a surface-emitting laser diode with an active amplifying region (2) which is bounded by two laser mirrors (1, 3), while one or more polarization-selective layers (4) are provided for stabilising the polarization in a region that is located on that side of at least one of the laser mirrors (1, 3) that is opposite the active amplifying region (2), these layers (4) extending parallel to the respective mirror (1; 3) and having a polarization-dependent refractive index and/or absorption.

Abstract: The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength ?, wherein a periodic structure is arranged within the resonator as an optical grating made of semiconductive material and dielectric material, the main plane of extension of which is arranged substantially perpendicularly to the direction of emission of the semiconductor laser diode. The periodic structure is in direct contact with at least one of the semiconductor layers embedding the active zone and with at least one of the two distributed Bragg reflectors.

Abstract: The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength ?, wherein a periodic structure is arranged within the resonator as an optical grating made of semiconductive material and dielectric material, the main plane of extension of which is arranged substantially perpendicularly to the direction of emission of the semiconductor laser diode. The periodic structure is in direct contact with at least one of the semiconductor layers embedding the active zone and with at least one of the two distributed Bragg reflectors.

Abstract: A surface-emitting semiconductor laser includes an active zone, the active zone having a p-n-junction and surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer; a tunnel contact layer on the p-side of the active zone; an n-doped current-carrying layer that covers the tunnel contact layer, the n-doped current-carrying layer comprising a raised portion; and a structured layer having an optical thickness at least equal to the optical thickness of the current-carrying layer in the region of the raised portion, wherein the structured layer is disposed on the current-carrying layer within a maximum distance of 2 ?m from the raised portion.

Abstract: A surface-emitting semiconductor laser includes an active zone, the active zone having a p-n-junction and surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer; a tunnel contact layer on the p-side of the active zone; an n-doped current-carrying layer that covers the tunnel contact layer, the n-doped current-carrying layer comprising a raised portion; and a structured layer having an optical thickness at least equal to the optical thickness of the current-carrying layer in the region of the raised portion, wherein the structured layer is disposed on the current-carrying layer within a maximum distance of 2 ?m from the raised portion.