Abstract: The invention relates to a semiconductor laser of the surface emitting type. In order to provide a semiconductor laser which can be operated at normal ambient temperatures and has stable long-term characteristics, the semiconductor laser comprises an active zone having a pn transition, a first n-doped semiconductor layer on the n side of the active zone, a structured tunnel contact on the p side of the active zone, which forms a conductive transition to a second n-doped semiconductor layer on the p-side of the active zone, a structured dielectric mirror, which is applied to the second n-doped semiconductor layer, a contact layer, which forms a contact with the second n-doped semiconductor layer at the places where the dielectric mirror is not applied, and a diffusion barrier between the contact layer and the second n-doped semiconductor layer.

Abstract: The invention relates to a semiconductor laser of the surface emitting type. In order to provide a semiconductor laser which can be operated at normal ambient temperatures and has stable long-term characteristics, the semiconductor laser comprises an active zone having a pn transition, a first n-doped semiconductor layer on the n side of the active zone, a structured tunnel contact on the p side of the active zone which forms a conductive transition to a second n-doped semiconductor layer on the p-side of the active zone, a structured dielectric mirror which is applied to the second n-doped semiconductor layer, a contact layer which forms a contact with the second n-doped semiconductor layer at the places where the dielectric mirror is not applied, and a diffusion barrier between the contact layer and the second n-doped semiconductor layer.