Abstract: According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region.

Abstract: According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region.

Abstract: Various embodiments provide a method of planarizing a semiconductor wafer, wherein the method comprises providing a semiconductor wafer comprising a surface; and forming a mask layer on the surface of the semiconductor wafer, wherein a thickness of the mask layer is smaller in thinning areas, which are to be thinned for planarizing, than in areas which are not to be thinned for planarizing.

Abstract: A method for use in manufacturing semiconductor devices includes providing a wafer on a support, covering a central wafer portion of the wafer, and cutting a marginal wafer portion of the wafer from the wafer. According to an embodiment of an apparatus, the apparatus includes a support configured to support a wafer, a masking device configured to cover a central wafer portion of the wafer, and a cutting device configured to cut a marginal wafer portion of the wafer from the wafer.

Abstract: Various embodiments provide a method of planarizing a semiconductor wafer, wherein the method comprises providing a semiconductor wafer comprising a surface; and forming a mask layer on the surface of the semiconductor wafer, wherein a thickness of the mask layer is smaller in thinning areas, which are to be thinned for planarizing, than in areas which are not to be thinned for planarizing.

Abstract: A method for manufacturing semiconductor devices includes providing a stack having a semiconductor wafer and a glass substrate with openings and at least one trench attached to the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor devices. The openings of the glass substrate leave respective areas of the semiconductor devices uncovered by the glass substrate and the trench connects the openings. A metal layer is formed at least on exposed walls of the trench and the openings and on the uncovered areas of the semiconductor devices of the semiconductor wafer. A metal region is formed by electroplating metal in the openings and the trench and by subsequently grinding the glass substrate to remove the trenches. The stack of the semiconductor wafer and the attached glass substrate is cut to separate the semiconductor devices.

Abstract: A method for manufacturing semiconductor devices includes providing a stack having a semiconductor wafer and a glass substrate with openings and at least one trench attached to the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor devices. The openings of the glass substrate leave respective areas of the semiconductor devices uncovered by the glass substrate and the trench connects the openings. A metal layer is formed at least on exposed walls of the trench and the openings and on the uncovered areas of the semiconductor devices of the semiconductor wafer. A metal region is formed by electroplating metal in the openings and the trench and by subsequently grinding the glass substrate to remove the trenches. The stack of the semiconductor wafer and the attached glass substrate is cut to separate the semiconductor devices.

Abstract: A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallization region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallization region.

Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.

Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.

Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.

Abstract: A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallisation region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallisation region.

Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.

Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.

Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.