Abstract: A vacuum valve or door having a closure plate for closing an opening in a wall. The opening has opposing first and second longitudinal edges and shorter opposing first and second transverse edges. A sealing unit seals the closure plate against the wall in the closed position. The sealing unit includes a supporting frame having opposing first and second longitudinal legs and shorter opposing first and second transverse legs, on which supporting frame there is mounted on one side a circumferential closure plate seal and on the other side a circumferential wall seal. The supporting frame is secured to fastening points on the wall, with central portions of the first and second longitudinal legs being free with respect to the wall, or the supporting frame is secured to fastening points on the closure plate, with the central being free with respect to the closure plate.

Abstract: A vacuum valve or door having a closure plate for closing an opening in a wall. The opening has opposing first and second longitudinal edges and shorter opposing first and second transverse edges. A sealing unit seals the closure plate against the wall in the closed position. The sealing unit includes a supporting frame having opposing first and second longitudinal legs and shorter opposing first and second transverse legs, on which supporting frame there is mounted on one side a circumferential closure plate seal and on the other side a circumferential wall seal. The supporting frame is secured to fastening points on the wall, with central portions of the first and second longitudinal legs being free with respect to the wall, or the supporting frame is secured to fastening points on the closure plate, with the central being free with respect to the closure plate.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: An inline vacuum processing apparatus for processing of substrates in vacuum comprises at least one load-lock chamber, at least two subsequent deposition chambers to be operated with essentially the same set of coating parameters and at least one unload-lock chamber plus means for transferring, post-processing and/or handling substrates through and in the various chambers. A method for depositing a thin film on a substrate in such processing system comprises the steps of introducing a first substrate into a load-lock chamber, lowering the pressure in said chamber; transferring the substrate into a first deposition chamber; depositing a layer of a first material on said first substrate using a first set of coating parameters; transferring said first substrate into a second, subsequent deposition chamber of said inline system without breaking vacuum and depositing a further layer of said first material on said first substrate using substantially the same set of parameters.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.