Patents by Inventor Markus POSTL

Markus POSTL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lithographic method for imprinting three-dimensional microstructures having oversized structural heights into a carrier material
    Patent number: 12455503
    Abstract: The invention relates to a lithographic process for embossing three-dimensional microstructures, which have oversized structure heights, in a photostructurable carrier material using an exposure device, wherein an oversized structure height has a height which exceeds the value of the maximum nominal penetration depth. The process comprises the following process steps: applying a photostructurable carrier material (1) to a layer height (H.1) on a substrate carrier (2); performing computer-aided modelling of a virtual three-dimensional structural model (10) of the microstructure to be embossed, the total height (H.10) of which structural model is greater than the maximum nominal penetration depth during exposure into the carrier material (1); performing computer-aided subdivision of the total height (H.10) of the structural model (10) into a number of sequentially stacked substructures (11, 12, 13); calculating a virtual photomask (M.11, M.12, M.
    Type: Grant
    Filed: May 20, 2022
    Date of Patent: October 28, 2025
    Assignee: Joanneum Research Forschungsgesellschaft mbH
    Inventors: Ladislav Kuna, Markus Postl, Barbara Stadlober
  • Lithographic Method for Imprinting Three-Dimensional Microstructures Having Oversized Structural Heights Into a Carrier Material
    Publication number: 20240248395
    Abstract: The invention relates to a lithographic process for embossing three-dimensional microstructures, which have oversized structure heights, in a photostructurable carrier material using an exposure device, wherein an oversized structure height has a height which exceeds the value of the maximum nominal penetration depth. The process comprises the following process steps: applying a photostructurable carrier material (1) to a layer height (H.1) on a substrate carrier (2); performing computer-aided modelling of a virtual three-dimensional structural model (10) of the microstructure to be embossed, the total height (H.10) of which structural model is greater than the maximum nominal penetration depth during exposure into the carrier material (1); performing computer-aided subdivision of the total height (H.10) of the structural model (10) into a number of sequentially stacked substructures (11, 12, 13); calculating a virtual photomask (M.11, M.12, M.
    Type: Application
    Filed: May 20, 2022
    Publication date: July 25, 2024
    Inventors: Ladislav KUNA, Markus POSTL, Barbara STADLOBER