Abstract: In order to achieve an increase in energy efficiency and a faster quenching of the workpieces, a device according to the invention is proposed for the treatment of metallic workpieces with cooling gas, comprising a horizontally arranged cylindrical housing (1) with at least one closable opening for the introduction and extraction of the workpieces to be treated, with a quenching chamber (2) located inside the housing (1) for receiving the workpieces to be treated, with two high-performance fans (5 and 6) arranged laterally and outside the quenching chamber (2) for guiding a cooling gas through the quenching chamber (2) and with two heat exchangers (11 and 12) for cooling the cooling gas, that heat exchanger (11 or 12) is respectively associated with a high-performance fan (5 or 6) and that closable guide devices (17 or 18) are arranged above and below the quenching chamber (2).

Abstract: In order to achieve an increase in energy efficiency and a faster quenching of the workpieces, a device according to the invention is proposed for the treatment of metallic workpieces with cooling gas, comprising a horizontally arranged cylindrical housing (1) with at least one closable opening for the introduction and extraction of the workpieces to be treated, with a quenching chamber (2) located inside the housing (1) for receiving the workpieces to be treated, with two high-performance fans (5 and 6) arranged laterally and outside the quenching chamber (2) for guiding a cooling gas through the quenching chamber (2) and with two heat exchangers (11 and 12) for cooling the cooling gas, that heat exchanger (11 or 12) is respectively associated with a high-performance fan (5 or 6) and that closable guide devices (17 or 18) are arranged above and below the quenching chamber (2).

Abstract: A process gas preparation device for an industrial furnace system is disclosed. The gas preparation device includes a preparation reactor having a catalyst. A gas feed line and a gas return line are connected between the industrial furnace and the preparation reactor to form a closed loop. A compressor is situated upstream from the preparation reactor in the feed line. The preparation reactor is also connected with supply lines for hydrocarbon gas and air to be supplied to the preparation reactor. The process gas preparation device also includes a control device with which process gas preparation and return can be regulated and controlled. The gas feed line also has a shut-off valve. The control device can check the functional state of the catalyst by measuring the pressure differential across the catalyst and can initiate a burn-out process therein to clear clogging of the catalyst.

Abstract: A gas system has a first compressor stage for compressing a process gas. The first compressor stage includes an intake side and a pressure side. A seal gas is provided outside the first compressor stage in order to prevent process gas from issuing from leaks in the first compressor stage, having at least one second line for returning a gas mixture issuing from the gas system, this mixture including at least of process gas and seal gas. The at least one second line is configured for returning the issuing gas mixture to the intake side of the first compressor stage and/or to a location in the gas system upstream of the first compressor stage.

Abstract: A process gas preparation device for an industrial furnace system is disclosed. The gas preparation device includes a preparation reactor having a catalyst. A gas feed line and a gas return line are connected between the industrial furnace and the preparation reactor to form a closed loop. A compressor is situated upstream from the preparation reactor in the feed line. The preparation reactor is also connected with supply lines for hydrocarbon gas and air to be supplied to the preparation reactor. The process gas preparation device also includes a control device with which process gas preparation and return can be regulated and controlled. The gas feed line also has a shut-off valve. The control device can check the functional state of the catalyst by measuring the pressure differential across the catalyst and can initiate a burn-out process therein to clear clogging of the catalyst.

Abstract: A gas system has a first compressor stage for compressing a process gas. The first compressor stage includes an intake side and a pressure side. A seal gas is provided outside the first compressor stage in order to prevent process gas from issuing from leaks in the first compressor stage, having at least one second line for returning a gas mixture issuing from the gas system, this mixture including at least of process gas and seal gas. The at least one second line is configured for returning the issuing gas mixture to the intake side of the first compressor stage and/or to a location in the gas system upstream of the first compressor stage.

Abstract: A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1, 2) into each of which opens a feed pipe (3, 4) for a process gas, each gas volume (1, 2) being connected to a plurality of corresponding process gas outlets (6, 7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity of the gas composition, the two gas volumes (1, 2) comprise pre-chambers (10, 10?, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9?) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10?, 11) and gas distribution chambers (12, 13) associated with each gas volume (1, 2) are connected with connection channels (14, 15).

Abstract: The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

Abstract: The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder.

Abstract: A method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder, is provided. The layer includes of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy.

Abstract: The invention relates to a device for the tempered storage of a container (19) for receiving condensed materials that are transported out of the container (19) by evaporation by means of a carrier gas guided through the container. Said device comprises a housing (3) forming a chamber (25), the wall (3) of said housing being embodied in a heat-insulating manner, a passage (20, 21) in the housing wall (3) for a gas supply line or gas evacuation line (17, 18) to, or from, the container (19) arranged in the chamber (25), and a heating (16) or cooling system for tempering the chamber (25). The invention is characterised in that a gas flow producer (4) and the gas flow guiding means (5-10) guiding the gas flow produced by the gas flow producer (4) are provided in the chamber (25), the gas flow produced by the gas flow producer and formed by the gas flow guiding means (5-10) being heated by the heating system (16) and flowing alongside the container (19).

Abstract: The invention relates to a device for the vaporisation of condensed (solid or liquid) materials, in particular, of starting materials for OLED production, comprising a container (1), for housing the material with a gas supply line (2) and a gas exhaust line (3). A number of inserts (4) for housing the material are arranged in the container (1) which have an individual flow thereover, whereby the inserts (4) are arranged one over the other in the vertical direction and comprise recesses (5) for housing the material in the horizontal direction over which a flow is possible. Several gas flows may flow in parallel over several inserts.

Abstract: The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

Abstract: A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1,2) into each of which opens a feed pipe (3,4) for a process gas, each gas volume (1,2) being connected to a plurality of corresponding provess gas outlets (6,7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity if the gas composition, the two gas volumes (1,2) comprose pre-chambers (10, 10?, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10?, 11) and gas distribution chambers (12, 13) associated with each gas volume (1,2) are connected with connection channels (14, 15).

Abstract: The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate (5), which is situated inside a process chamber (2) of a reactor (1) while being supported by a substrate holder (4). The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor (1) in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy.

Abstract: The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate from one another into a process chamber of a reactor, whereby the first process gas flows through a central line having a central outlet opening, and the second process gas flows through a line, which is peripheral thereto and which has a peripheral outlet opening. The second process gas flows through one or more supply lines and into a mixing chamber and flows through additional means, which influence the gas stream and which are provided for homogenizing the radial flow profile of the process gas exiting the peripheral outlet opening. The aim of the invention is to obtain a homogeneous radial flow profile by using simple means.

Abstract: The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate from one another into a process chamber of a reactor, whereby the first process gas flows through a central line having a central outlet opening, and the second process gas flows through a line, which is peripheral thereto and which has a peripheral outlet opening. The second process gas flows through one or more supply lines and into a mixing chamber and flows through additional means, which influence the gas stream and which are provided for homogenizing the radial flow profile of the process gas exiting the peripheral outlet opening. The aim of the invention is to obtain a homogeneous radial flow profile by using simple means.