Abstract: The present invention relates to a thin-film solar cell and a process for producing it, where the rear-side layer structure of the thin-film solar cell has a multilayer structure comprising a metallic bonding layer, a transition layer and an Ag-containing reflector layer and displays a high degree of reflection and good adhesion of the layer system.

Abstract: This invention relates to a mask blank for use in EUV lithography and a method for its production. The mask blank comprises a substrate with a front side and a rear side whereby a coating is applied to the front side for use as a mask in EUV lithography and the rear side of the substrate comprises an electrically conductive coating. The electrically conductive coating is particularly abrasion resistant and strongly adhesive according to DIN 58196-5 (German Industry Standard), DIN 58196-4 and DIN 58196-6 and characterised by a minimum electrical conductivity. The electrically conductive coating is applied by means of ion-beam-assisted sputtering. Since the electrically conductive coating on the rear side is so abrasion resistant and strongly adhesive, the mask blank may be gripped, held and handled by means of an electrostatic holding device (chuck) without any troublesome abrasion occurring.

Abstract: The present invention relates to mask blanks with anti reflective coatings comprising at least two sublayers. Such bilayer or multilayer anti reflective coatings are advantageous for binary and phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less with improved anti reflection properties; and to EUVL mask blanks having improved inspection properties.

Abstract: The present invention relates to embedded attenuated phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less, and a method of fabricating such mask blanks by ion beam deposition. In particular, the mask blanks comprise a substrate and a thin film system wherein the thin film system comprises a transmission control sublayer comprising one or more metals or metal compounds selected from the group consisting of Mg, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Zn, Ge, Sn, Pb, oxides, nitrides, borides and carbides thereof, and combinations of metals and compounds thereof; and a phase shift control sublayer comprising borides, carbides, oxides and/or nitrides of Ge, Si and/or Al or combinations thereof.

Abstract: The invention relates to a method of producing a mask blank (1) for photolithographic applications, particularly in EUV lithography, comprising the steps of: providing a substrate (2) which has a front side (4) and a rear side (3); depositing an electrically conductive layer (5) on the rear side of the substrate; depositing a coating on the front side of the substrate, wherein the coating comprises at least a first layer (6) and a second layer (9); and structuring the coating (6, 9) for photolithographic applications; wherein a respective handling area (22; 22a-22c) is formed on the front side (4) at least at one predefined location, said handling area not being structured for photolithographic applications and being designed for the handling of the mask blank (1) by means of a mechanical clamp or handling device, and wherein the first layer (6) is exposed in the respective handling area (22; 22a-22c) so that, when the mask blank (1) is handled from the front side, the mechanical clamp or handling devi

Abstract: The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.

Abstract: The invention relates to a method for manufacturing of a mask blank for extreme ultraviolet (EUV) photolithography, comprising the steps of: providing a substrate having a front surface and a back surface; depositing a film comprising tantalum nitride (TaN) on said front surface of said substrate for absorbing EUV light used during a photolithographic process; and depositing a conductive coating on said back surface of said substrate. Preferably, ion beam sputtering is used for depositing the film comprising tantalum nitride (TaN) and/or the conductive coating on the back surface of the substrate. Preferably, Xenon is used as a sputter gas for ion beam sputtering. Another aspect of the present invention relates to a mask blank for extreme ultraviolet (EUV) photolithography.

Abstract: A mask blank and photomask for exposure light having a wavelength of 300 nm or is less described having an improved chemical durability in particular with respect to alkaline cleaning procedures. In particular, a mask blank and photomask comprise an additional ultra thin protection layer provided on a silicon and/or aluminum containing layer.

Abstract: The present invention relates to phase shift mask blanks for exposure wavelength of less than 300 nm, a process for their preparation, to phase shift masks manufactured by such phase shift mask blanks and a process for the preparation of said phase shift masks.

Abstract: The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.

Abstract: The invention relates to a photo mask blank, a photo mask, a method and an apparatus for manufacturing a photo mask blank in general, and for manufacturing a photo mask blank by particle beam sputtering in particular. It is an object of the invention to provide a method of manufacturing a photo mask blank of high quality and high stability that is suitable for the production of a photo mask having small structures. The invention proposes a method for manufacturing a photo mask blank, wherein a substrate and a target are provided in a vacuum chamber. The target is sputtered by irradiating with a first particle or ion beam and at least a first layer of a first material is deposited on the substrate by the sputtering of said target.

Abstract: This invention relates to a mask blank for use in EUV lithography and a method for its production.