Abstract: The invention relates to a stacked laser arrangement, including a first laser device having a light exit side and a semiconductor body which forms a resonator and has an active zone and two main sides and side faces arranged substantially perpendicular thereto; wherein the laser device has at least one contact region on a first of the two main sides. Moreover, a first spacer having a first contact main side and a contact side face is provided, with the contact main side having at least one contact line which leads from a contact region to a connection area on or adjacent to the contact side face. With its first main side facing the first contact main side, the first laser device is fastened to the first spacer such that the at least one contact region is electrically connected to the contact region of the first contact main side, and the side faces of the first laser device are spaced apart from the contact side face.

Abstract: The invention relates to a stacked laser arrangement with a first laser device with a light-emitting side and a semiconductor body forming a resonator with an active zone and with two main sides and side surfaces arranged essentially perpendicularly thereto, the side surfaces comprising an insulating material. In addition, at least one second laser device with a light-emitting side and a semiconductor body forming a resonator with an active zone and with two main sides and side surfaces arranged substantially perpendicular thereto is provided, the side surfaces comprising an insulating material. The light exit sides of the first laser device and at least one second laser device point in the same direction and the at least one second laser device is arranged on one of the main sides of the first laser device.

Abstract: In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

Abstract: The invention relates to an optoelectronic semiconductor component having a frame body, which is radiolucent at least in regions, and at least one first semiconductor chip which is designed to emit a first electromagnetic radiation. The frame body has a recess. At least a first waveguide is formed in the frame body. A first coupling surface of the first waveguide is formed on a side surface of the recess facing the first semiconductor chip. A decoupling surface is formed on an outer surface of the frame body. The first semiconductor chip is arranged in the recess in such a way that at least a part of the first electromagnetic radiation enters into the first waveguide. The invention also relates to method for producing a plurality of optoelectronic semiconductor components.

Abstract: A door handle assembly (1), such as an outer door handle arrangement for a vehicle including at least one vehicle movable element may have the following elements. A handle element having a handle recess. A handle cover, which may at least partially covers the handle recess. An actuating unit, which may be arranged between the handle element and the handle cover. A carrier unit including at least one sensor and at least one switch for opening a door lock. Where the carrier unit is designed to unlock the door lock when an object situated in a detection area of the sensor is detected. The actuating unit being designed to press the switch during a manual actuation.

Abstract: A system for determining the location of pipelines using at least one geopig that is introduced into a pipeline, advances therein and that has a magnetic source for generating a magnetic field, wherein at least one unmanned aerial vehicle is provided with magnetic field sensors and position determination devices, a controller is provided for determining the field strength profile of the magnetic field and for positioning the unmanned aerial vehicle at a defined distance from the at least one geopig, and a device is provided for determining the location of the at least one geopig from the position of the unmanned aerial vehicle and the defined distance between the at least one geopig and the unmanned aerial vehicle.

Abstract: A gas-insulated line is provided. The gas-insulated line defines an axial direction and includes an enclosure configured to surround a nominal conductor and a pressurized insulation gas in the enclosure, wherein the enclosure includes: a first attachment point and a second attachment point, the first attachment point and the second attachment point being spaced apart from each other in the axial direction; a rope element fixed between the first attachment point and the second attachment point and loaded with a pretension; and a flexible enclosure element arranged between the first attachment point and the second attachment point.

Abstract: A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.

Abstract: In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

Abstract: A door handle assembly (1), such as an outer door handle arrangement for a vehicle including at least one vehicle movable element may have the following elements. A handle element having a handle recess. A handle cover, which may at least partially covers the handle recess. An actuating unit, which may be arranged between the handle element and the handle cover. A carrier unit including at least one sensor and at least one switch for opening a door lock. Where the carrier unit is designed to unlock the door lock when an object situated in a detection area of the sensor is detected. The actuating unit being designed to press the switch during a manual actuation.

Abstract: A method of producing an optoelectronic component includes providing a carrier, generating a plurality of recesses in the carrier, applying a plurality of drops of a cover material to the carrier, introducing an optoelectronic semiconductor chip including a semiconductor body and contact elements on an underside of the semiconductor body into at least some of the drops, and curing the drops of the cover material into cover bodies, wherein at least some of the drops are completely surrounded by recesses in the carrier, and the recesses in the carrier are a stop edge for the cover material during introduction of the optoelectronic semiconductor chip.

Abstract: An optoelectronic component having a leadframe and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a radiation-emitting semiconductor chip having a mounting surface and side surfaces, a leadframe comprising a first element having a first main extension plane, a second element having a second main extension plane, and a third element having a third main extension plane, wherein the main extension planes are arranged parallel to one another, and wherein the elements are arranged one above the other in a stacking direction; and a reflective casting compound forming a planar surface facing the mounting surface of the semiconductor chip, wherein the semiconductor chip is mounted with the mounting surface on a support surface of the third element, which is smaller than the mounting surface of the semiconductor chip, such that the semiconductor chip projects laterally beyond the support surface of the third element.

Abstract: A method includes providing a metallic auxiliary carrier and forming metallic structure elements on the auxiliary carrier by carrying out at least one metal deposition process with the aid of at least one masking layer. Provision is furthermore made for arranging a reflective embedding material enclosing the metallic structure elements on the auxiliary carrier and removing the auxiliary carrier, such that a carrier comprising the structure elements and the embedding material and comprising two opposite main sides is provided. The main sides of the carrier are formed by the structure elements and the embedding material. The method furthermore includes arranging radiation-emitting semiconductor chips on the carrier, arranging a conversion material for radiation conversion on the carrier provided with the semiconductor chips, and carrying out a singulation process of forming separate radiation-emitting components.

Abstract: A gas-insulated line is provided. The gas-insulated line defines an axial direction and includes an enclosure configured to surround a nominal conductor and a pressurized insulation gas in the enclosure, wherein the enclosure includes: a first attachment point and a second attachment point, the first attachment point and the second attachment point being spaced apart from each other in the axial direction; a rope element fixed between the first attachment point and the second attachment point and loaded with a pretension; and a flexible enclosure element arranged between the first attachment point and the second attachment point.

Abstract: A system for determining the location of pipelines using at least one geopig that is introduced into a pipeline, advances therein and that has a magnetic source for generating a magnetic field, wherein at least one unmanned aerial vehicle is provided with magnetic field sensors and position determination devices, a controller is provided for determining the field strength profile of the magnetic field and for positioning the unmanned aerial vehicle at a defined distance from the at least one geopig, and a device is provided for determining the location of the at least one geopig from the position of the unmanned aerial vehicle and the defined distance between the at least one geopig and the unmanned aerial vehicle.

Abstract: A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.

Abstract: An optoelectronic component having a leadframe and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a radiation-emitting semiconductor chip having a mounting surface and side surfaces, a leadframe comprising a first element having a first main extension plane, a second element having a second main extension plane, and a third element having a third main extension plane, wherein the main extension planes are arranged parallel to one another, and wherein the elements are arranged one above the other in a stacking direction; and a reflective casting compound forming a planar surface facing the mounting surface of the semiconductor chip, wherein the semiconductor chip is mounted with the mounting surface on a support surface of the third element, which is smaller than the mounting surface of the semiconductor chip, such that the semiconductor chip projects laterally beyond the support surface of the third element.

Abstract: A lighting device and a method for producing a lighting device are disclosed. In an embodiment, the lighting device includes a carrier, at least one optoelectronic illuminant arranged on the carrier, the illuminant configured to emit light into an emission area and a color scattering layer located in the emission area, the color scattering layer configured to generate a color by scattering of light at a surface of the color scattering layer facing away from the illuminant.

Abstract: A method of producing an optoelectronic component includes providing a carrier, generating a plurality of recesses in the carrier, applying a plurality of drops of a cover material to the carrier, introducing an optoelectronic semiconductor chip including a semiconductor body and contact elements on an underside of the semiconductor body into at least some of the drops, and curing the drops of the cover material into cover bodies, wherein at least some of the drops are completely surrounded by recesses in the carrier, and the recesses in the carrier are a stop edge for the cover material during introduction of the optoelectronic semiconductor chip.

Abstract: A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. In an embodiment, the conversion lamina includes a base material and a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 60 ?m inclusive and 170 ?m inclusive.