Abstract: The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material. The method includes further steps of removing the seed material, growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure and growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction. The second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Abstract: The invention relates to a method for fabricating a semiconductor device. The method includes providing a cavity structure comprising a seed area with a seed material. The method further includes growing, within the cavity structure, a quantum dot structure in a first growth direction from a seed surface of the seed material and growing, in the first growth direction, a first embedding layer on a first surface of the quantum dot structure. The method further includes removing the seed material and growing, within the cavity structure, on a second surface of the quantum dot structure, a second embedding layer in a second growth direction. The second surface of the quantum dot structure is different from the first surface of the quantum dot structure and the second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Abstract: The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material. The method includes further steps of removing the seed material, growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure and growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction. The second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Abstract: The invention relates to a method for fabricating a semiconductor device. The method includes providing a cavity structure comprising a seed area with a seed material. The method further includes growing, within the cavity structure, a quantum dot structure in a first growth direction from a seed surface of the seed material and growing, in the first growth direction, a first embedding layer on a first surface of the quantum dot structure. The method further includes removing the seed material and growing, within the cavity structure, on a second surface of the quantum dot structure, a second embedding layer in a second growth direction. The second surface of the quantum dot structure is different from the first surface of the quantum dot structure and the second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Abstract: The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material. The method includes further steps of removing the seed material, growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure and growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction. The second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Abstract: The invention relates to a method for fabricating a semiconductor structure. The method comprises fabricating a photonic crystal structure of a first material, in particular a first semiconductor material and selectively removing the first material within a predefined part of the photonic crystal structure. The method further comprises replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy. The one or more second materials may be in particular semiconductor materials. The invention further relates to devices obtainable by such a method.

Abstract: The invention relates to a method for fabricating a semiconductor structure. The method comprises fabricating a photonic crystal structure of a first material, in particular a first semiconductor material and selectively removing the first material within a predefined part of the photonic crystal structure. The method further comprises replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy. The one or more second materials may be in particular semiconductor materials. The invention further relates to devices obtainable by such a method.