Abstract: A method dresses one polishing cloth or two polishing pads simultaneously, in which a polishing cloth has been applied to a polishing plate, with at least one dresser (4), which is equipped with at least one dressing element (8), this at least one dressing element (8) being in contact with the at least one polishing cloth (11, 12) to be dressed, wherein the at least one polishing plate (21, 22) is rotated with a relative rotational speed and the at least one dresser (4) is rotated with a relative rotational speed and at least two different combinations of directions of rotation of the two pairs of polishing plates (21, 22) and pin wheels (31, 32) are executed during the simultaneous dressing of two polishing pads (11, 12) or during the dressing of one polishing cloth (11) of the polishing plate (21) and of the at least one dresser (4).

Abstract: A method dresses one polishing cloth or two polishing pads simultaneously, in which a polishing cloth has been applied to a polishing plate, with at least one dresser (4), which is equipped with at least one dressing element (8), this at least one dressing element (8) being in contact with the at least one polishing cloth (11, 12) to be dressed, wherein the at least one polishing plate (21, 22) is rotated with a relative rotational speed and the at least one dresser (4) is rotated with a relative rotational speed and at least two different combinations of directions of rotation of the two pairs of polishing plates (21, 22) and pin wheels (31, 32) are executed during the simultaneous dressing of two polishing pads (11, 12) or during the dressing of one polishing cloth (11) of the polishing plate (21) and of the at least one dresser (4).

Abstract: The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between rotating polishing plates during a polishing run which lasts for a polishing time, the semiconductor wafer being located in a cutout in a carrier having a defined carrier thickness and being held on a defined geometric path, the semiconductor wafer having a starting thickness prior to polishing and a final thickness after polishing. The polishing time for the polishing run is calculated from data which include the starting thickness of the semiconductor wafer and the carrier thickness as well as the starting thickness and final thickness and the flatness of a semiconductor wafer which was polished during a polishing run preceding the present polishing run.

Abstract: The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between rotating polishing plates during a polishing run which lasts for a polishing time, the semiconductor wafer being located in a cutout in a carrier having a defined carrier thickness and being held on a defined geometric path, the semiconductor wafer having a starting thickness prior to polishing and a final thickness after polishing. The polishing time for the polishing run is calculated from data which include the starting thickness of the semiconductor wafer and the carrier thickness as well as the starting thickness and final thickness and the flatness of a semiconductor wafer which was polished during a polishing run preceding the present polishing run.

Abstract: A process is for the simultaneous polishing of the front surface and the back surface of a semiconductor wafer between two rotating polishing plates covered with polishing cloth while a polishing fluid is supplied, the polishing cloth of the lower polishing plate having a smooth surface and the polishing cloth of the upper polishing plate having a surface which is interrupted by channels. The semiconductor wafer lying in a cutout in a carrier plate is held on a defined geometric path. The front surface of the semiconductor wafer, during polishing, is in contact with the polishing cloth of the lower polishing plate. The back surface of the semiconductor wafer, during polishing, is in contact with the polishing cloth of the upper polishing plate.

Abstract: The invention relates to a method for assembling planar workpieces, whereby a connection, whose adhesiveness and brittleness is temperature-dependent, is made by means of a cement between the planar workpiece and a support plate. The method is characterised in that connected are only partially covered by the cement after the workpiece has been placed on the support plate.