Abstract: The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio PIR=INi/IW·(AW+Ax)/ANi of 0.40 or greater, wherein INi is the intensity of the (111) peak of Ni, IW is the intensity of the (110) peak of W, Aw is the fraction of W in the target in atom %, Ax is the total fraction of the one or more further metals selected from the group of the refractory metals, Sn, Al and Si in the target in atom %, ANi is the fraction of Ni in the target in atom %, and wherein the intensities of the peaks are determined by X-ray powder diffraction using Cu-Kalpha radiation.

Abstract: The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio PIR=INi/Iw·(Aw+Ax)/ANI of 0.40 or greater, wherein INi is the intensity of the (111) peak of Ni, Iw is the intensity of the (110) peak of W, Aw is the fraction of W in the target in atom %, Ax is the total fraction of the one or more further metals selected from the group of the refractory metals, Sn, Al and Si in the target in atom %, ANi is the fraction of Ni in the target in atom %, and wherein the intensities of the peaks are determined by X-ray powder diffraction using Cu-Kalpha radiation.

Abstract: Known cylindrical sputtering targets comprise a substrate and a target material that forms a layer on the substrate, said layer has a thickness d, wherein the target material comprises TiOx as the main component, and x is within a range of 1<x<2. Starting therefrom and in order to provide large-sized cylindrical sputtering targets with a thick target layer comprising sub-stoichiometric TiO2 it is proposed that x is within a range of 1.45<x<1.7 that allows a target layer thickness d which is larger than 10 mm.

Abstract: A double-layer system includes a metal layer facing away from a viewer and a coating facing the viewer. In order to make the layer system production process as simple as possible and to provide a sputter deposition method that dispenses entirely with the use of reactive gases in the sputtering atmosphere or requires only a small amount thereof, the coating is in the form of an optically partially absorbing layer which has an absorption coefficient kappa of less than 0.7 at a wavelength of 550 nm and a thickness ranging from 30 to 55 nm.

Abstract: The present invention relates to a sputtering target, which comprises a zirconium oxide as a sputtering material, wherein the zirconium oxide has an oxygen deficiency, compared to the oxygen content of its fully oxidized form, of at least 0.40 wt %, has a total amount of metal elements other than zirconium of less than 3.0 wt %, based on the total amounts of metal elements including zirconium, and has an X-ray powder diffraction pattern having a peak P1 at 28.2°+/?0.2° 2-theta, a peak P2 at 31.4°+/?0.2° 2-theta, and a peak P3 at 30.2°+/?0.2° 2-theta.

Abstract: The invention relates to a process for preparation of the intermetallic compound Nb3Sn by melt metallurgical procedure. The process comprises the steps of pressing Nb particles and Sn particles to form a start electrode, whereby the pressed start electrode is remelted in a vacuum in an electric arc, whereby a first moulded body is obtained. Alternatively, the process comprises the steps of remelting an Nb start electrode in an electric arc in a vacuum, whereby Sn particles are being introduced into the molten Nb forming during the remelting, whereby a first moulded body is obtained. The molar ratio of Nb and Sn is selected appropriately such that the first moulded body obtained contains at least 50% by weight of the intermetallic compound Nb3Sn as the A15 phase as well as free Nb and/or Sn and inevitable impurities, if applicable.

Abstract: A double-layer system includes a metal layer facing away from a viewer and a coating facing the viewer. In order to make the layer system production process as simple as possible and to provide a sputter deposition method that dispenses entirely with the use of reactive gases in the sputtering atmosphere or requires only a small amount thereof, the coating is in the form of an optically partially absorbing layer which has an absorption coefficient kappa of less than 0.7 at a wavelength of 550 nm and a thickness ranging from 30 to 55 nm.

Abstract: The present invention relates to a sputtering target, which comprises a zirconium oxide as a sputtering material, wherein the zirconium oxide has an oxygen deficiency, compared to the oxygen content of its fully oxidized form, of at least 0.40 wt %, has a total amount of metal elements other than zirconium of less than 3.0 wt %, based on the total amounts of metal elements including zirconium, and has an X-ray powder diffraction pattern having a peak P1 at 28.2°+/?0.2° 2-theta, a peak P2 at 31.4°+/?0.2° 2-theta, and a peak P3 at 30.2°+/?0.2° 2-theta.

Abstract: The invention claims a three dimensional sputter target comprising CuZnSn material, CuZn material or CuSn material. Exemplary has a CuZnSn material a Cu content ranging from 40 atomic percent to 60 atomic percent; a Zn content ranging from 20 atomic percent to 30 atomic percent; and a Sn content ranging from 20 atomic percent to 30 atomic percent, wherein the three dimensional sputter target has at least one principal axis dimension greater than 500 mm and the CuZnSn material has a grain size ranging from 0.005 mm to 5 mm. Additional to that claims the invention a method of producing the three dimensional sputter target.

Abstract: A light-absorbing layer system includes an absorber layer having an oxidic matrix. The oxidic matrix is based on a base component made of zinc oxide, tin oxide and/or indium oxide, and on an added component which can replace the base component K1 up to a fraction of 75% by weight. The added component consists of niobium oxide, hafnium oxide, titanium oxide, tantalum oxide, vanadium oxide, yttrium oxide, zirconium oxide, aluminum oxide and/or mixtures thereof. A blackening component, made of molybdenum, tungsten and alloys and mixtures thereof, is distributed in the matrix and is present either as metal or as substoichiometric-oxidic compound of the metal, such that the layer material has a degree of reduction which is defined by an oxygen content of at most 65% of the stoichiometrically maximum oxygen content. The weight fraction of the blackening component is in the range between 20 and 50% by weight.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: An outer side wall structure for a motor vehicle, in particular a passenger automobile, having a front section and a rear section, between which at least one door of the motor vehicle can be situated, and having an upper section and a lower section. It is provided that the sections form a peripheral frame.

Abstract: An outer side wall structure for a motor vehicle, in particular a passenger automobile, having a front section and a rear section, between which at least one door of the motor vehicle can be situated, and having an upper section and a lower section. It is provided that the sections form a peripheral frame.

Abstract: A sputter target includes a sputter material made of an alloy or a material mixture composed of at least two components which are in a state of thermodynamic disequilibrium. The components are compacted by an isostatic or uniaxial cold-pressing process.

Abstract: A tubular target is provided having a cylindrical carrier tube, at least one target tube arranged on its exterior surface, and a connecting layer arranged between the target tube and the carrier tube. The connecting layer is electrically conductive and has a wetting degree of >90%.

Abstract: An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 ?-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

Abstract: A material mixture is produced having a cobalt-based alloy as the predominant component and an additional component of at least TiOx. The material mixture may be formed into a sputter target by hot pressing.

Abstract: A sputter target is made of a material comprising at least two phases or components, wherein at least one minor phase has low solubility in the matrix and has a higher melting point than the matrix. The at least one minor phase has a mean particle size of 10 ?m maximum of its grains or of agglomerates formed by its grains, and the material has a density of at least 98% of its theoretical density.

Abstract: A tubular sputtering target with a target body and with an attachment device arranged at at least one end of the target body. The attachment device and/or an end cover are joined with the target body by material joining or positive locking.