Abstract: The invention provides a process for preparing diphenylmethanediamine, comprising the steps of: a) reacting aniline with formaldehyde in the presence of an acid, b) neutralizing the predominant part of the acid with ammonia and/or aqueous ammonia solution, c) separating the reaction mixture from step b) into an aqueous phase and an organic phase, d) neutralizing the other part of the acid, present in the organic phase, with aqueous alkali metal hydroxide solution, e) separating the reaction mixture from step d) into an aqueous phase and an organic phase, f) treating the aqueous phase obtained in step c) or optionally the combined aqueous phases from steps c) and e) with at least one oxide or hydroxide of an alkaline earth metal, g) removing the ammonia obtained in step f).

Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

Abstract: A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.

Abstract: Processes are disclosed comprising: (a) reacting an aqueous formaldehyde solution in a reactor in the presence of a suitable catalyst to obtain a reaction product mixture comprising trioxane, formaldehyde and water; (b) distilling the reaction product mixture to form a top stream comprising crude trioxane; and (c) treating the top stream in one or more additional stages to form pure trioxane; wherein an aqueous sidestream is drawn off during the distilling of the reaction mixture.

Abstract: An integrated process for preparing trioxane from formaldehyde.

Abstract: A process for preparing polyoxymethylene homopolymers or copolymers (7) by homopolymerization or copolymerization of trioxane, starting from methanol (1), in which methanol (1) is oxidized in a first reactor in a first production plant (A) to give an aqueous formaldehyde-comprising stream (2) which is fed to a second production plant (B) in which pure trioxane (6) is obtained and removal of low boilers (5) by distillation is carried out and the pure trioxane (6) is fed to a third production plant (C) in which it is homopolymerized or copolymerized to form polyoxymethylene homopolymers or copolymers (7), wherein the low boiler stream (5) from the low boiler removal column (K 2) is recycled to the feed stream into the first reactor in the first production plant (A), is proposed.

Abstract: A process for removing trioxane from a use stream I of formaldehyde, trioxane and water, by a) providing a use stream I which comprises formaldehyde as the main component and trioxane and water as the secondary components, b) feeding the use stream I, a recycle stream V and a recycle stream VII which comprises formaldehyde as the main component and water and trioxane as the secondary components into a first distillation stage and distilling to obtain a stream II a steam III and formaldehyde as the and a steam X c) distilling the stream III, in a second distillation stage the pressure in the second distillation stage being from 0.

Abstract: A process for separating trioxane from a feed stream I comprising formaldehyde, trioxane and water, in which a) a feed stream I comprising formaldehyde as main component and trioxane and water as secondary components is provided, b) the feed stream I, a recycle stream V and a recycle stream VII comprising formaldehyde as main component and water and trioxane as secondary components are fed into a first distillation stage and distilled at a pressure of from 0.1 to 2.5 bar to give a stream II comprising formaldehyde as main component and water as secondary component and a stream III comprising trioxane as main component and water and formaldehyde as secondary components and a stream X comprising water, trioxane and formaldehyde, c) the stream III is, if appropriate after removal of low boilers from the stream III in a low boiler removal stage, distilled in a second distillation stage at a pressure of from 0.2 to 17.5 bar, with the pressure in the second distillation stage being from 0.

Abstract: The invention provides a process for preparing diphenylmethanediamine, comprising the steps of a) reacting aniline with formaldehyde in the presence of an acid, b) neutralizing the acid with ammonia, c) separating the reaction mixture from step b) into an aqueous phase and an organic phase, d) treating the aqueous phase obtained in step c) with an oxide or hydroxide of an alkaline earth metal, e) separating off the ammonia obtained in step d).

Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

Abstract: The invention provides a process for preparing diphenylmethanediamine, comprising the steps of: a) reacting aniline with formaldehyde in the presence of an acid, b) neutralizing the predominant part of the acid with ammonia and/or aqueous ammonia solution, c) separating the reaction mixture from step b) into an aqueous phase and an organic phase, d) neutralizing the other part of the acid, present in the organic phase, with aqueous alkali metal hydroxide solution, e) separating the reaction mixture from step d) into an aqueous phase and an organic phase, f) treating the aqueous phase obtained in step c) or optionally the combined aqueous phases from steps c) and e) with at least one oxide or hydroxide of an alkaline earth metal, g) removing the ammonia obtained in step f).

Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

Abstract: A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.

Abstract: A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.

Abstract: Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

Abstract: The invention relates to a process for the preparation of triamides from ammonia and amido-dichlorides.

Abstract: The invention relates to a process for the preparation of triamides from ammonia and amido-dichlorides.

Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

Abstract: A process for preparing crude trioxane (1) having a concentration in the range from 50 to 75% by weight of trioxane by trimerization of formaldehyde from an aqueous formaldehyde solution (2) in the presence of an acid catalyst (3) and concentration of the trioxane from the reaction mixture from the trimerization by distillation, wherein the trimerization of the formaldehyde and the concentration of the trioxane from the reaction mixture from the trimerization are carried out in a single column (K) which is divided by a horizontal dividing plate (T) into a lower column region (A) and an upper column region (B), with the lower column region (A) and the upper column region (B) being connected by an external vapor line and an external liquid line, and a reactive distillation in which the formaldehyde is trimerized to trioxane and the trioxane in the reaction mixture is concentrated to the solubility limit of formaldehyde is carried out in the lower column region (A) at a pressure in the range from 1 to 5 bar a

Abstract: A process for preparing polyoxymethylene homopolymers or copolymers (7) by homopolymerization or copolymerization of trioxane, starting from methanol (1), in which methanol (1) is oxidized in a first reactor in a first production plant (A) to give an aqueous formaldehyde-comprising stream (2) which is fed to a second production plant (B) in which pure trioxane (6) is obtained and removal of low boilers (5) by distillation is carried out and the pure trioxane (6) is fed to a third production plant (C) in which it is homopolymerized or copolymerized to form polyoxymethylene homopolymers or copolymers (7), wherein the low boiler stream (5) from the low boiler removal column (K 2) is recycled to the feed stream into the first reactor in the first production plant (A), is proposed.