Abstract: A supply circuit adapted to provide a continuous power supply for a string of serially connected light emitting elements driven with a current source, said supply circuit including: a voltage supply capacitor connected to said string and being adapted to provide a supply voltage for a driving control unit configured to control the light emitting elements of said string; and a capacitor bypass switch connected in parallel with said voltage supply capacitor and being controlled by a local control circuit of said driving control unit, wherein said capacitor bypass switch is switched off by said local control circuit to charge said voltage supply capacitor with a charging current to maintain a continuous power supply without disturbing the current to said string of light emitting elements.

Abstract: A supply circuit adapted to provide a continuous power supply for a string of serially connected light emitting elements driven with a current source, said supply circuit including: a voltage supply capacitor connected to said string and being adapted to provide a supply voltage for a driving control unit configured to control the light emitting elements of said string; and a capacitor bypass switch connected in parallel with said voltage supply capacitor and being controlled by a local control circuit of said driving control unit, wherein said capacitor bypass switch is switched off by said local control circuit to charge said voltage supply capacitor with a charging current to maintain a continuous power supply without disturbing the current to said string of light emitting elements.

Abstract: A voltage regulator for a bit line of a semiconductor memory cell is disclosed. In one embodiment, the voltage regulator includes an inverter, a feedback transistor, and a band gap reference voltage source. The inverter includes an inverter input connected to the bit line, and an inverter output. The feedback transistor includes a feedback source connected to the inverter input, and a feedback gate connected to the inverter output. The band gap reference voltage source predetermines the voltage to which the inverter input is regulated.

Abstract: A voltage regulator for a bit line of a semiconductor memory cell is disclosed. In one embodiment, the voltage regulator includes an inverter, a feedback transistor, and a band gap reference voltage source. The inverter includes an inverter input connected to the bit line, and an inverter output. The feedback transistor includes a feedback source connected to the inverter input, and a feedback gate connected to the inverter output. The band gap reference voltage source predetermines the voltage to which the inverter input is regulated.