Abstract: A computer-implemented method for processing a sample arranged on a sample stage with a nanomanipulator comprising a tip for processing the sample and a positioning unit for moving the tip, the method comprising the following steps: focusing (S10) an image provided by an image recording device on the tip and/or the sample; selecting (S11) the sample or the tip as a target feature; and automatically setting (S12) a focal point of the nanomanipulator based on at least one operating parameter of one of the sample stage and the positioning unit indicative of a vertical movement of the sample stage and/or the positioning unit, respectively, so as to keep the target feature focused within the image provided by the image recording device during processing.

Abstract: The disclosure provides a method for landing a tip of a probe of a nanomanipulator on a sample, in particular in vacuum, the probe comprising a cantilever and the tip attached thereto, the nanomanipulator further comprising an excitation unit, the probe being mechanically coupled with the excitation unit, the method including the following steps: oscillating the probe by providing a resonant driving signal to the excitation unit while the tip is not in contact with the sample; reducing a first distance in a z-direction between the tip and the sample during a first approach phase until at least one first stop condition of a first set of stop conditions is met, wherein the first set of stop conditions comprises detecting a shift in the frequency of the resonant driving signal used during the first approach phase; and terminating the first approach phase when the at least one first stop condition of the first set of stop conditions is met, and deactivating the resonant driving signal.

Abstract: The present invention relates to a method for ascertaining a repair shape for processing at least one defect of a photolithographic mask including the following steps: (a) determining at least one correction value for the repair shape of the at least one defect, wherein the correction value takes account of a position of at least one pattern element of the photolithographic mask, said at least one pattern element not contacting the at least one defect; and (b) correcting the repair shape by applying the at least one correction value.

Abstract: The present invention relates to a method for ascertaining a repair shape for processing at least one defect of a photolithographic mask including the following steps: (a) determining at least one correction value for the repair shape of the at least one defect, wherein the correction value takes account of a position of at least one pattern element of the photolithographic mask, said at least one pattern element not contacting the at least one defect; and (b) correcting the repair shape by applying the at least one correction value.

Abstract: An apparatus for correlating at least two images of a photolithographic mask that at least partially overlap, in which the apparatus includes a correlation unit that is provided to use at least one random variation, which is present in the at least two images, of at least one structural element of the photolithographic mask for the correlation of the at least two images.

Abstract: The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.

Abstract: An apparatus for correlating at least two images of a photolithographic mask that at least partially overlap, in which the apparatus includes a correlation unit that is provided to use at least one random variation, which is present in the at least two images, of at least one structural element of the photolithographic mask for the correlation of the at least two images.

Abstract: The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.

Abstract: Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively “the layer”). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity of the second. Both resists are subjected to an exposure dose in defined regions of the layer surface, the dose varying locally between first and second doses. The first dose is chosen to expose the first resist but not the second. The second dose is chosen to expose the second resist. After a first development of the second and of the first resist the layer is etched at the uncovered locations for a first time. After complete removal of the second resist and a second development of the first resist, the layer is etched. As a result, it is possible to produce structures of different depths in the layer.

Abstract: A method of determining an exposure dose for writing a pattern using an electron beam writer determines a target dose in the exposure region to obtain a predetermined energy deposition in a specific position of the exposure region, the predetermined energy deposition being larger than a reference energy deposition in the non-exposure region. The target dose is locally increased in a marginal region of the exposure region (the marginal region being adjacent the exposure boundary) to a value that obtains an energy deposition in the marginal region higher than the predetermined energy deposition. Optionally, the target dose can be locally decreased in an intermediate region of the exposure region (the intermediate region being adjacent the marginal region) to a value that obtains an energy deposition in the intermediate region smaller than the predetermined energy deposition. Also provided is an exposure device for carrying out the method.

Abstract: Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively “the layer”). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity of the second. Both resists are subjected to an exposure dose in defined regions of the layer surface, the dose varying locally between first and second doses. The first dose is chosen to expose the first resist but not the second. The second dose is chosen to expose the second resist. After a first development of the second and of the first resist the layer is etched at the uncovered locations for a first time. After complete removal of the second resist and a second development of the first resist, the layer is etched. As a result, it is possible to produce structures of different depths in the layer.

Abstract: A method of determining an exposure dose for writing a pattern using an electron beam writer determines a target dose in the exposure region to obtain a predetermined energy deposition in a specific position of the exposure region, the predetermined energy deposition being larger than a reference energy deposition in the non-exposure region. The target dose is locally increased in a marginal region of the exposure region (the marginal region being adjacent the exposure boundary) to a value that obtains an energy deposition in the marginal region higher than the predetermined energy deposition. Optionally, the target dose can be locally decreased in an intermediate region of the exposure region (the intermediate region being adjacent the marginal region) to a value that obtains an energy deposition in the intermediate region smaller than the predetermined energy deposition. Also provided is an exposure device for carrying out the method.

Abstract: While physically cage-type molecules differ significantly, they are of great chemical similarity so that thus far they cannot be arranged in controllable structures with respect to each other. By contrast, in accordance with the invention, molecular arrangements of geometrically uniform, even periodic, structural configurations of highly precise selectable spacings and angles can be realized in a self-organizing manner by chemically modifying the molecular cages by selective connection of addends. To this end, suitable pairs of types (P′) of addends (A′, B′) which are complementary and selective relative to each other are being used. These usually bilaterally bondable addends (A′, B′) are at one end bonded to defined selectable positions of the cage molecules (A, B) and form adducts (A2, B2) therewith. The other end is structured to be chemically highly selective so that the addends (A′, B′) only connect to each other by the chemical lock and key principle.

Abstract: Solid matter quantum computers with local control accesses are based on the fixed arrangement of spins as quantum mechanical information units. Local control accesses allow the dynamic modification of the resonance frequency of individual spins and the interlinking of spins for the individual addressing of spins in order to carry out computer operations. Known local control accesses perform poorly and are difficult to produce. The invention uses the electron spins of enclosure atoms in endohedral fullerenes, which are electromagnetically interlinked (J) by a magnetic dipole-dipole interaction (105). The resonance frequency (&ohgr;) is regulated by a controlled electron transfer to or from the cage of the endohedral fullerenes (104) with an adjustable residence time. The electromagnetic link (J) is regulated by a controlled angular modification v (108) between the orientation of the external magnetic field (B) (109) and the binding vector (r) (107) of neighboring fullerenes (104).