Abstract: Polycrystalline silicon is produced in a chemical vapour deposition reactor, wherein, outside the reactor at at least one position on at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded. The vibrations may be used to identify rod fall over and other events occurring within the reactor.

Abstract: Polycrystalline silicon is produced in a chemical vapour deposition reactor, wherein, outside the reactor at at least one position on at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded. The vibrations may be used to identify rod fall over and other events occurring within the reactor.

Abstract: A method for producing and classifying polycrystalline silicon. The method includes producing polycrystalline silicon rod within a reaction space of a gas phase deposition reactor by introducing a reaction gas, which in addition to hydrogen contains silane and/or at least one halosilane. Once produced, the polycrystalline silicon rod is extracted from the reactor, and at least one two-dimensional and/or three-dimensional image is generated of at least one partial region of the polycrystalline silicon rod or of at least one silicon chunk created. At least one analysis region is selected per generated image and at least two surface-structure indices per analysis region are generated by using image processing methods, each of which is generated using a different image processing method. The surface-structure indices are combined to form a morphology index.

Abstract: Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.

Abstract: A process for producing polycrystalline silicon and a gas phase deposition chamber for the same. The process includes introducing a reaction gas containing an amount of silane and/or an amount of at least one halosilane as well as an amount of hydrogen into a reaction space of a gas phase deposition reactor. The reaction space includes at least one heated support body upon which by deposition silicon is deposited to form the polycrystalline silicon. For the detection of dust depositions, at least one measuring apparatus is used to determine the amount of haze inside the reaction space during deposition.

Abstract: A method for producing polycrystalline silicon includes introducing a reaction gas, which in addition to hydrogen contains silane and/or at least one halosilane, into a reaction space of a gas phase deposition reactor. The reaction space includes at least one heated filament rod upon which by deposition silicon is deposited to form a polycrystalline silicon rod. During the deposition, the the morphology of the silicon rod is determined.

Abstract: Polycrystalline silicon is produced in a chemical vapour deposition reactor, wherein, outside the reactor at at least one position on at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded. The vibrations may be used to identify rod fall over and other events occurring within the reactor.

Abstract: Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.