Patents by Inventor Markus Weyers

Markus Weyers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices having group III-V compound layers
    Patent number: 6734476
    Abstract: A power semiconductor device includes a substrate of first conductivity having a dopant concentration of a first level. The substrate is a group III-V compound material. A transitional layer of first conductivity is epitaxially grown over the substrate. The transitional layer has a dopant concentration of a second level and is a group III-V compound material. An epitaxial layer of first conductivity is grown over the transitional layer and has a dopant concentration of a third level. Electrical currents flow through the transitional and epitaxial layers when the device is operating.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: May 11, 2004
    Assignee: Ixys Corporation
    Inventors: Stefan Moessner, Markus Weyers
  • Semiconductor devices having group III-V compound layers
    Publication number: 20030006455
    Abstract: A power semiconductor device includes a substrate of first conductivity having a dopant concentration of a first level. The substrate is a group III-V compound material. A transitional layer of first conductivity is epitaxially grown over the substrate. The transitional layer has a dopant concentration of a second level and is a group III-V compound material. An epitaxial layer of first conductivity is grown over the transitional layer and has a dopant concentration of a third level. Electrical currents flow through the transitional and epitaxial layers when the device is operating.
    Type: Application
    Filed: April 30, 2002
    Publication date: January 9, 2003
    Applicant: IXYS Corporation
    Inventors: Stefan Moessner, Markus Weyers