Abstract: An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.

Abstract: Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); and a voltage waveform generator (150) conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform (300) comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.

Abstract: An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.

Abstract: An integrated circuit (100) comprising a substrate (110); an insulating layer (120) over said substrate; and a first nanowire element (140a) and a second nanowire element (140b) adjacent to said first nanowire element on said insulating layer; wherein the first nanowire element is arranged to be exposed to a medium comprising an analyte of interest, and wherein the second nanowire element is shielded from said medium by a shielding layer (150) over said second nanowire element. A sensing apparatus including such an IC, a sensing method using such an IC and a method of manufacturing such an IC are also disclosed.

Abstract: Integrated circuit (100) comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140) on said insulating layer, said first transistor comprising an exposed channel region (146) in between a source region (142a, 142b) and a drain region (144); and a voltage waveform generator (150) conductively coupled to the semiconductor substrate for providing the first transistor with a bias voltage during a signal acquisition period, wherein the voltage waveform generator is arranged to generate an alternating bias voltage waveform (300) comprising a periodically increasing amplitude. A sensing apparatus including such an integrated circuit and a sensing method using such an integrated circuit are also disclosed.

Abstract: Integrated circuit (100) sensor array, comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140a) on said insulating layer, the first transistor comprising an exposed functionalized channel region (146a) in between a source region (142a) and a drain region (144) for sensing an analyte in a medium; a second transistor (140b) on said insulating layer, the second transistor comprising an exposed channel region (146b) in between a source region (142b) and a drain region (144) for sensing a potential of said medium; and a voltage bias generator (150) conductively coupled to the semiconductor substrate for providing said transistors with a bias voltage, said voltage bias generator being responsive to the second transistor. A sensing apparatus comprising such an IC and an analyte measurement method using such an IC are also disclosed.