Abstract: A chemical containment vessel provides an environmental seal around a bottle containing hazardous chemicals for use in manufacturing processes. An enclosure vessel is made of upper and lower assemblies connected together to form a cavity for housing the bottle. A gasket between the upper and lower assemblies provides the environmental seal for the containment vessel. The inner conduits of first and second coaxial conduits are coupled to the inlet and outlet of the bottle for transporting the hazardous chemical to a reaction chamber. The outer conduits of the first and second coaxial conduits are connected to the cavity to nitrogen purge any chemical compound escaping from the bottle into the cavity. The escaping hazardous chemical can be detected and removed in a safe manner.

Abstract: An improved carrier for holding semiconductor wafers at a predetermined angle during processing is described having side rails with slots for holding lateral edges of the wafer and bottom slots having a curved floor for supporting the wafer edge without substantially contacting the corners of the wafer where the wafer edge and principal wafer surfaces join. This reduces yield loss due to wafer edge chipping. The side slots are desirably off-set from corresponding bottom slots so that the wafers will be consistently oriented at the predetermined angle and have uniform spacing.

Abstract: A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit ports are provided which allow the continuous transfer of the foils and polycrystalline ribbon between the chamber and the ambient. The foils are positioned within the chamber so as to mask the chamber walls and to restrict the deposition to the foils. All deposition of polycrystalline silicon takes place on one side of each of the foil pieces; deposition on the edges or backs of the foils is prevented by the positioning of the foils relative to each other. Adhesion of the foils to each other is prevented by insuring that all foils are in relative motion.

Abstract: A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit ports are provided which allow the continuous transfer of the foils and polycrystalline ribbon between the chamber and the ambient. The foils are positioned within the chamber so as to mask the chamber walls and to restrict the deposition to the foils. All deposition of polycrystalline silicon takes place on one side of each of the foil pieces; deposition on the edges or backs of the foils is prevented by the positioning of the foils relative to each other. Adhesion of the foils to each other is prevented by insuring that all foils are in relative motion.

Abstract: Apparatus utilizes two or more orifices in series, fixed normal to the flow field, which provide a pressure reservoir from which the static pressure is sensed for the purpose of sensing variations in flow within a tube. The apparatus comprises a plurality of orifices, flow regulators, pressure repeaters and electrical pressure switches all connected so as to function as a complete system.