Patents by Inventor Marlon Menezes
Marlon Menezes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140212534Abstract: An imprint lithography template includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. The porous material includes silicon and oxygen, and a ratio of Young's modulus (E) to relative density of the porous material with respect to fused silica (?porous/?fused silica) is at least about 10:1. A refractive index of the porous material is between about 1.4 and 1.5. The porous material may form an intermediate layer or a cap layer of an imprint lithography template. The template may include a pore seal layer between a porous layer and a cap layer, or a pore seal layer on top of a cap layer.Type: ApplicationFiled: January 30, 2013Publication date: July 31, 2014Applicant: MOLECULAR IMPRINTS, INC.Inventors: Edward B. Fletcher, Frank Y. Xu, Weijun Liu, Fen Wan, Marlon Menezes, Kosta S. Selinidis
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Patent number: 8541053Abstract: Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.Type: GrantFiled: July 7, 2011Date of Patent: September 24, 2013Assignee: Molecular Imprints, Inc.Inventors: Marlon Menezes, Frank Y. Xu, Fen Wan
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Patent number: 8470188Abstract: Porous nano-imprint lithography templates may include pores, channels, or porous layers arranged to allow evacuation of gas trapped between a nano-imprint lithography template and substrate. The pores or channels may be formed by etch or other processes. Gaskets may be formed on an nano-imprint lithography template to restrict flow of polymerizable material during nano-imprint lithography processes.Type: GrantFiled: October 2, 2009Date of Patent: June 25, 2013Assignee: Molecular Imprints, Inc.Inventor: Marlon Menezes
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Publication number: 20120009413Abstract: Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.Type: ApplicationFiled: July 7, 2011Publication date: January 12, 2012Applicant: MOLECULAR IMPRINTS, INC.Inventors: Marlon Menezes, Frank Y. Xu, Fen Wan
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Patent number: 7989366Abstract: Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.Type: GrantFiled: August 24, 2007Date of Patent: August 2, 2011Assignee: Applied Materials, Inc.Inventors: Jeffrey C. Munro, Srinivas D. Nemani, Young S. Lee, Marlon Menezes, Christopher Dennis Bencher, Vijay Parihar
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Publication number: 20100109201Abstract: A nano-imprint lithography template includes a non-porous base layer, a cap layer, and a porous layer between the base layer and the cap layer. The porous layer defines a multiplicity of pores and has an ordered pore structure. The cap layer is permeable to helium, and the pores in the porous layer are configured to accept gas passing through the cap layer during an imprint lithography process. The porous layer provides high porosity with a Young's modulus and hardness that are advantageous for imprint lithography processes.Type: ApplicationFiled: October 30, 2009Publication date: May 6, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Edward Brian Fletcher, Frank Y. Xu, Weijun Liu, Marlon Menezes
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Publication number: 20100104852Abstract: An imprint lithography template includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. The porous material includes silicon and oxygen, and a ratio of Young's modulus (E) to relative density of the porous material with respect to fused silica (pporous/pfused silica) is at least about 10:1. A refractive index of the porous material is between about 1.4 and 1.5. The porous material may form an intermediate layer or a cap layer of an imprint lithography template. The template may include a pore seal layer between a porous layer and a cap layer, or a pore seal layer on top of a cap layer.Type: ApplicationFiled: October 22, 2009Publication date: April 29, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Edward B. Fletcher, Frank Y. Xu, Weijun Liu, Fen Wan, Marlon Menezes, Kosta S. Selinidis
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Publication number: 20100084376Abstract: Porous nano-imprint lithography templates may include pores, channels, or porous layers arranged to allow evacuation of gas trapped between a nano-imprint lithography template and substrate. The pores or channels may be formed by etch or other processes. Gaskets may be formed on an nano-imprint lithography template to restrict flow of polymerizable material during nano-imprint lithography processes.Type: ApplicationFiled: October 2, 2009Publication date: April 8, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Niyaz Khusnatdinov, Weijun Liu, Frank Y. Xu, Fen Wan, Edward Brian Fletcher, Marlon Menezes
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Publication number: 20080057740Abstract: Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.Type: ApplicationFiled: August 24, 2007Publication date: March 6, 2008Applicant: Applied Materials, Inc.Inventors: Jeffrey Munro, Srinivas Nemani, Young Lee, Marlon Menezes, Christopher Bencher, Vijay Parihar
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Publication number: 20070054504Abstract: A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.Type: ApplicationFiled: September 7, 2005Publication date: March 8, 2007Applicant: APPLIED MATERIALS, INC.Inventors: Xiaolin Chen, Srinivas Nemani, DongQing Li, Jeffrey Munro, Marlon Menezes