Patents by Inventor Marnix Bernard Willemsen

Marnix Bernard Willemsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compensation network for RF transistor
    Patent number: 8981433
    Abstract: A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: March 17, 2015
    Assignee: NXP, B.V.
    Inventors: Lukas Frederik Tiemeijer, Vittorio Cuoco, Rob Mathijs Heeres, Jan Anne van Steenwijk, Marnix Bernard Willemsen, Josephus Henricus Bartholomeus van der Zanden
  • RF-power device
    Patent number: 8766427
    Abstract: An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: July 1, 2014
    Assignee: NXP, B.V.
    Inventor: Marnix Bernard Willemsen
  • RF-POWER DEVICE
    Publication number: 20120168840
    Abstract: An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.
    Type: Application
    Filed: December 22, 2011
    Publication date: July 5, 2012
    Applicant: NXP B.V.
    Inventor: Marnix Bernard Willemsen
  • COMPENSATION NETWORK FOR RF TRANSISTOR
    Publication number: 20120132969
    Abstract: A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.
    Type: Application
    Filed: November 23, 2011
    Publication date: May 31, 2012
    Applicant: NXP B.V.
    Inventors: Lukas Frederik Tiemeijer, Vittorio Cuoco, Rob Mathijs Heeres, Jan Anne van Steenwijk, Marnix Bernard Willemsen, Josephus Henricus Bartholomeus van der Zanden