Abstract: A nanopore cell may include a well having a seamless porous electrode and hydrophobic sidewalls. The seamless porous electrode may be formed by depositing porous electrode material on a planar electrode support layer formed by a conductive layer island and a dielectric layer. The porous electrode material may form uniform seamless columns and may be protected during manufacturing by depositing a selectably removable protective layer thereon. The well may be formed by forming and then patterning hydrophobic cladding over the protective layer. The protective layer may be removed to expose the seamless porous electrode at the bottom of the well.

Abstract: Disclosed herein are ruthenium-containing materials, such as ruthenium containing materials having a double layer capacitance ranging from between about 180 pF/um2 to about 320 pF/um2. In some embodiments, the ruthenium-containing materials are suitable for use in electrodes. In some embodiments, the ruthenium-containing materials are suitable for use in nanopore sequencing devices.

Abstract: A nanopore cell may include a well having a working electrode at a bottom of the well. The well may be formed within a dielectric layer, where the sidewalls of the well may be formed of the dielectric or other materials coating the walls of the dielectric layer. Various materials having different hydrophobicity and hydrophilicity can be used to provide desired properties of the cell. The nanopore in the nanopore cell can be inserted in a membrane formed over the well. Various techniques can be used for providing a desired shape and other properties e.g., of materials and processes for forming the well.

Abstract: A nanopore cell may include a well having a working electrode at a bottom of the well. The well may be formed within a dielectric layer, where the sidewalls of the well may be formed of the dielectric or other materials coating the walls of the dielectric layer. Various materials having different hydrophobicity and hydrophilicity can be used to provide desired properties of the cell. The nanopore in the nanopore cell can be inserted in a membrane formed over the well. Various techniques can be used for providing a desired shape and other properties e.g., of materials and processes for forming the well.

Abstract: A nanopore cell may include a well having a working electrode at a bottom of the well. The well may be formed within a dielectric layer, where the sidewalls of the well may be formed of the dielectric or other materials coating the walls of the dielectric layer. Various materials having different hydrophobicity and hydrophilicity can be used to provide desired properties of the cell. The nanopore in the nanopore cell can be inserted in a membrane formed over the well. Various techniques can be used for providing a desired shape and other properties e.g., of materials and processes for forming the well.

Abstract: A method for forming vias and trenches for an interconnect structure on a substrate includes exposing via pitch reduction patterns in a photoresist layer, developing the patterns to remove the via pitch reduction patterns, etching the photoresist layer partially using a polymer gas to reshape the pattern into small via shapes, and etching the remaining photoresist layer to extend the reshaped pattern. The reshaped small via shape patterns have a smaller pitch than the via pitch reduction patterns in a long direction. For via pitch reduction patterns having two vias each, the pattern has a peanut-shape. During the reshaping etch operation, the polymer gas deposits more in a pinched-in middle section while allowing downward etch in unpinched sections.

Abstract: A method for forming vias and trenches for an interconnect structure on a substrate includes exposing via pitch reduction patterns in a photoresist layer, developing the patterns to remove the via pitch reduction patterns, etching the photoresist layer partially using a polymer gas to reshape the pattern into small via shapes, and etching the remaining photoresist layer to extend the reshaped pattern. The reshaped small via shape patterns have a smaller pitch than the via pitch reduction patterns in a long direction. For via pitch reduction patterns having two vias each, the pattern has a peanut-shape. During the reshaping etch operation, the polymer gas deposits more in a pinched-in middle section while allowing downward etch in unpinched sections.