Abstract: Disclosed are undersea cables having a high fiber count and low electrical resistance. In some embodiments, an optical cable includes a hollow buffer tube having a plurality of optical fibers therein, wherein the hollow buffer tube includes inner and outer buffer surfaces, and wherein the outer buffer surface of the hollow buffer tube defines an outer diameter. The optical cable may further include a first plurality of layered strength members surrounding the hollow buffer tube, and a conductor surrounding the first plurality of layered strength members. The optical cable may further include an outer jacket surrounding the conductor, wherein the outer jacket includes inner and outer jacket surfaces, wherein the outer jacket defines an outer diameter of the outer jacket, and wherein the outer diameter of the outer jacket is equal to or less than five times the outer diameter of the hollow buffer tube.

Abstract: Disclosed is a cable with dual metal conductor structure. In some embodiments, an optical cable includes hollow buffer tube having a plurality of optical fibers therein, and a first plurality of layered strength members surrounding the hollow buffer tube. The optical cable may further include a conductor surrounding the first plurality of layered strength members, wherein the conductor includes a first metal layer surrounded by a second metal layer, and an outer insulating jacket surrounding the conductor.

Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a patterned hardmask over a substrate, and providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment. The method may further include etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask.

Abstract: Disclosed are a system and techniques to determine a color of an optical fiber in a fiber optic cable. A spectrophotometer camera may obtain a color value of the optical fiber. A fiber adaptor is operable to hold a single optical fiber of a fiber optic cable in a field of view of the spectrophotometer camera. A memory storing instructions that, when executed by a processor, enable identifying a color of the optical fiber. The color value may be compared to a color value of a number of reference colors. A color match score value may be generated for the color value with respect to each reference color. A confidence value may be obtained for a pair of color match scores that are closest in score value. Based on the confidence value, one of the reference colors is identified as a color of the optical fiber.

Abstract: Disclosed are a system and techniques to determine a color of an optical fiber in a fiber optic cable. A spectrophotometer camera may obtain a color value of the optical fiber. A fiber adaptor is operable to hold a single optical fiber of a fiber optic cable in a field of view of the spectrophotometer camera. A memory storing instructions that, when executed by a processor, enable identifying a color of the optical fiber. The color value may be compared to a color value of a number of reference colors. A color match score value may be generated for the color value with respect to each reference color. A confidence value may be obtained for a pair of color match scores that are closest in score value. Based on the confidence value, one of the reference colors is identified as a color of the optical fiber.

Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a patterned hardmask over a substrate, and providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment. The method may further include etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask.