Abstract: A module includes a circuit package, which includes first and second electronic components on a substrate, internal and external shields, and a molded compound. The first electronic component includes a first die substrate with first electronic circuitry that generates electromagnetic radiation. The second electronic component includes a second die substrate with second electronic circuitry. The internal shield is electrically connected to ground and substantially covers a surface of the second die substrate facing away from the substrate, the internal shield being configured to shield the second electronic circuitry from the electromagnetic radiation generated by the first electronic circuitry. The molded compound is disposed over the substrate and the first and second electronic components, and the external shield is disposed on at least one outer surface of the circuit package and electrically connected to ground.

Abstract: An apparatus, a semiconductor package including the apparatus and a method are disclosed. The apparatus includes a substrate, pluralities of vias disposed in the substrate. The vias are disposed in a hexagonal arrangement.

Abstract: A module includes a circuit package, which includes first and second electronic components on a substrate, internal and external shields, and a molded compound. The first electronic component includes a first die substrate with first electronic circuitry that generates electromagnetic radiation. The second electronic component includes a second die substrate with second electronic circuitry. The internal shield is electrically connected to ground and substantially covers a surface of the second die substrate facing away from the substrate, the internal shield being configured to shield the second electronic circuitry from the electromagnetic radiation generated by the first electronic circuitry. The molded compound is disposed over the substrate and the first and second electronic components, and the external shield is disposed on at least one outer surface of the circuit package and electrically connected to ground.

Abstract: A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Abstract: An apparatus, a semiconductor package including the apparatus and a method are disclosed. The apparatus includes a substrate, pluralities of vias disposed in the substrate. The vias are disposed in a hexagonal arrangement.

Abstract: An apparatus, a semiconductor package including the apparatus and a method are disclosed. The apparatus includes a substrate, pluralities of vias disposed in the substrate. The vias are disposed in a hexagonal arrangement.

Abstract: A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Abstract: A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Abstract: A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Abstract: A semiconductor structure includes semiconductor devices on a substrate, a moisture barrier on the substrate surrounding the semiconductor devices, and a metal conductive redistribution layer formed over the moisture barrier. The metal conductive redistribution layer and the moisture barrier define a closed compartment containing the semiconductor devices.

Abstract: A semiconductor structure includes semiconductor devices on a substrate, a moisture barrier on the substrate surrounding the semiconductor devices, and a metal conductive redistribution layer formed over the moisture barrier. The metal conductive redistribution layer and the moisture barrier define a closed compartment containing the semiconductor devices.

Abstract: An electronic package. The electronic package includes an electronic component having a heat producing device, an attachment piece, and at least two attachment units. Each unit includes an attachment pillar having a mating surface, a solder layer formed on the mating surface, and an attachment pad located on the attachment piece. The pillar of each unit is attached to its unit attachment pad via its unit solder layer and is otherwise attached to the electronic component. One pillar at least partially covers the heat producing device. Prior to attachment of pillars to their associated unit pads, the unit solder layer of the pillar at least partially covering the heat producing device is patterned to cover less than its mating surface, and the pillar at least partially covering the heat producing device is thermally connected to the heat producing device and to its unit attachment pad via its unit solder layer.

Abstract: a thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.

Abstract: A thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.

Abstract: A thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.