Abstract: An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).

Abstract: A circuitry for differential amplifying, logical inversion, NAND and/or NOR operations is provided, which includes at least one depletion mode transistor having JFET characteristics. A method for determining the properties of an electrochemical circuitry is provided, including at least one semi-finished transistor, by applying a solidified electrolyte to selected sets of electrochemically active transistor elements is also provided.

Abstract: Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by way of a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having ability to electrochemically altering its redox state, such that a transistor channel of the transistor is defined thereby.

Abstract: Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having the ability to electrochemically altering its redox state, such that a transistor channel of said transistor is defined thereby.

Abstract: A circuitry for differential amplifying, logical inversion, NAND and/or NOR operations is provided, which includes at least one depletion mode transistor having JFET characteristics. A method for determining the properties of an electrochemical circuitry is provided, including at least one semi-finished transistor, by applying a solidified electrolyte to selected sets of electrochemically active transistor elements is also provided.

Abstract: Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by way of a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having ability to electrochemically altering its redox state, such that a transistor channel of the transistor is defined thereby.

Abstract: An electrochemical transistor device is provided, which comprises a flexible substrate; a layer of organic material, which comprises a source portion, a drain portion and a transistor channel portion; a gate electrode arranged on said substrate separated from said layer of organic material; and a layer of solidified electrolyte arranged in overlapping electric contact with said gate electrode and only with the transistor channel portion of said layer of organic material, thereby defining said transistor channel portion, such that current between said source portion and drain portion is controllable by means of a potential applied to said gate electrode.

Abstract: An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).

Abstract: An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).

Abstract: An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).

Abstract: A pixel device comprising an electrochemical transistor device with a source and a drain contact; a gate electrode; an electrochemically active element in direct electrical contact with source and drain contacts, and comprising a transistor channel comprising an organic material; and a solidified electrolyte in direct electrical contact with the active element, and an electrochromic device comprising an electrochromic element comprising a material conducting in at least one oxidation state and an electrochromic material; a solidified electrolyte layer in direct electrical contact with the electrochromic element; and two electrodes for application of a voltage and in direct electrical contact with a component selected from the electrolyte layer(s); in which one of the source and drain contacts of the electrochemical transistor device is in electrical contact with one of the electrodes of the electrochromic device.

Abstract: A supported or self-supporting electrochromic device is provided having (a) at least one electrochromic element comprising (i) at least one material that is electrically conducting in at least one material that is electrically conducting in at least one oxidation state and (ii) at least one electrochromic material, wherein said materials (i) and (ii) can be the same or different, (b) at least one layer of a solidified electrolyte which is in direct electrical contact with said electrochromic element, and (c) at least two electrodes adapted to be electrically connected to a voltage supply so as to create a difference in potential therebetween, with each of said electrodes being in direct electrical contact with at least one of said electrolyte layer(s) and not in direct electrical contact with said electrochromic element. Displays incorporating such a device, as well as processes for the production of such a device are contemplated. A method for addressing an electrochemically active element also is provided.

Abstract: An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).

Abstract: A pixel device is provided, which comprises; (A) an electrochemical transistor device with a source and a drain contact; a gate electrode; an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof; and a solidified electrolyte in direct electrical contact with the electrochemically active element and the gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented; whereby flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s), and (B) an electrochromic device comprising: an electrochromic element comprising (i) a material that is electrically conduc

Abstract: A supported or self-supporting electrochromic device is provided, comprising: