Abstract: An microelectronic device includes a substrate, a piezoelectric component formed over the substrate, at least one trench formed in the substrate. The piezoelectric component has a corresponding resonance frequency. The at least one trench is configured to reduce mechanical stress on the piezoelectric component, in response to force applied to the substrate, for stabilizing the resonance frequency.

Abstract: An apparatus comprises a substrate, a dielectric disposed on the semiconductor substrate, an acoustic resonator disposed on the dielectric, and an electrical interconnect disposed in the dielectric and configured to transmit an electrical signal to or from at least one electrode of the acoustic resonator through a signal path disposed at least partially below a level of the acoustic resonator.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: A bulk acoustic wave (BAW) resonator device comprises a heating coil disposed over a first side of the piezoelectric layer and substantially around a perimeter adjacent to the active area of the acoustic resonator, the heating coil comprising a resistor configured to receive a heater current; and a heat sensor disposed over a second side of the piezoelectric layer and opposing the first side, the heat sensor configured to adjust the heater current in response to a temperature of the heating coil.

Abstract: An acoustic resonator device comprises: a substrate comprising a cavity or an acoustic mirror; a first electrode disposed over the substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer. The first electrode or the second electrode, or both, are made of an electrically conductive material having a positive temperature coefficient.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: An acoustic resonator comprises: an acoustic resonator device comprises: a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a first interlayer disposed on the first electrical conductive layer; a buried temperature compensation layer disposed over the first interlayer; a second interlayer disposed over the temperature compensation layer; a second electrically conductive layer disposed over the second interlayer, a piezoelectric layer disposed over the composite first electrode; and a second electrode disposed over the piezoelectric layer.

Abstract: An apparatus comprises a substrate, a dielectric disposed on the semiconductor substrate, an acoustic resonator disposed on the dielectric, and an electrical interconnect disposed in the dielectric and configured to transmit an electrical signal to or from at least one electrode of the acoustic resonator through a signal path disposed at least partially below a level of the acoustic resonator.

Abstract: An microelectronic device includes a substrate, a piezoelectric component formed over the substrate, at least one trench formed in the substrate. The piezoelectric component has a corresponding resonance frequency. The at least one trench is configured to reduce mechanical stress on the piezoelectric component, in response to force applied to the substrate, for stabilizing the resonance frequency.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: An acoustic resonator device comprises: a substrate comprising a cavity or an acoustic mirror; a first electrode disposed over the substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer. The first electrode or the second electrode, or both, are made of an electrically conductive material having a positive temperature coefficient.

Abstract: An acoustic resonator comprises: an acoustic resonator device comprises: a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a first interlayer disposed on the first electrical conductive layer; a buried temperature compensation layer disposed over the first interlayer; a second interlayer disposed over the temperature compensation layer; a second electrically conductive layer disposed over the second interlayer, a piezoelectric layer disposed over the composite first electrode; and a second electrode disposed over the piezoelectric layer.

Abstract: A bulk acoustic wave (BAW) resonator device comprises a heating cod disposed over a first side of the piezoelectric layer and substantially around a perimeter adjacent to the active area of the acoustic resonator, the heating coil comprising a resistor configured to receive a heater current; and a heat sensor disposed over a second side of the piezoelectric layer and opposing the first side, the heat sensor configured to adjust the heater current in response to a temperature of the heating coil.

Abstract: A device includes: a base substrate having a bonding pad and a peripheral pad, the peripheral pad encompassing the bonding pad; an acoustic resonator on the base substrate; a cap substrate having a bonding pad seal and a peripheral pad seal, the bonding pad seal bonding around the perimeter of the bonding pad and the peripheral pad seal bonding with the peripheral pad to define a hermetically sealed volume between the cap substrate and the base substrate, the cap substrate having a through hole therein over the bonding pad providing access for a connection to the bonding pad; a low-resistivity material layer region disposed on a portion of a surface of the cap substrate disposed inside the hermetically sealed volume, the material layer region being isolated from the bonding pad seal; and electronic circuitry disposed in the material layer region and electrical connected with the acoustic resonator.

Abstract: A device includes: a base substrate having a bonding pad and a peripheral pad, the peripheral pad encompassing the bonding pad; an acoustic resonator on the base substrate; a cap substrate having a bonding pad seal and a peripheral pad seal, the bonding pad seal bonding around the perimeter of the bonding pad and the peripheral pad seal bonding with the peripheral pad to define a hermetically sealed volume between the cap substrate and the base substrate, the cap substrate having a through hole therein over the bonding pad providing access for a connection to the bonding pad; a low-resistivity material layer region disposed on a portion of a surface of the cap substrate disposed inside the hermetically sealed volume, the material layer region being isolated from the bonding pad seal; and electronic circuitry disposed in the material layer region and electrical connected with the acoustic resonator.