Patents by Inventor Martha R. Krueger

Martha R. Krueger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6998320
    Abstract: A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents.
    Type: Grant
    Filed: April 23, 2003
    Date of Patent: February 14, 2006
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Martha R. Krueger, Andrew N. MacInnes
  • Publication number: 20040214401
    Abstract: A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents.
    Type: Application
    Filed: April 23, 2003
    Publication date: October 28, 2004
    Applicant: TriQuint Semiconductor, Inc.
    Inventors: Martha R. Krueger, Andrew N. MacInnes