Abstract: A process for manufacturing a mould including: a) providing a first substrate made of photosensitive glass of thickness of at least equal to the height of the mould, b) illuminating the first substrate with UV rays through a mask the windows of which correspond to the depression of the mould in order to create illuminated zones, c) carrying out a heat treatment on the first substrate obtained in step b) in order to crystallize the illuminated zones, d) providing a second substrate having at least one conductive layer on its surface, e) joining the first substrate obtained in step c) with the second substrate so that the conductive layer is located between the first substrate and the second substrate, f) removing the illuminated and crystallized zones of the first substrate so as to uncover the conductive layer, forming a cavity with sidewalls and a bottom occupied by the conductive layer of the mould.

Abstract: A device for fabricating a mask by plasma etching a semiconductor substrate comprises a semiconductor substrate part of the area whereof is partially covered by a mask for protecting at least one area that must not be etched and for exposing at least one area including a pattern to be etched, a support for the substrate and means for generating a plasma in the form of a flow of ions toward the substrate. According to the invention the device further comprises means for confining the ions, including a conductive material screen disposed over the substrate and along the limit between the pattern area to be etched and the area not to be etched.

Abstract: A device for fabricating a mask by plasma etching a semiconductor substrate comprises a semiconductor substrate part of the area whereof is partially covered by a mask for protecting at least one area that must not be etched and for exposing at least one area including a pattern to be etched, a support for the substrate and means for generating a plasma in the form of a flow of ions toward the substrate. According to the invention the device further comprises means for confining the ions, including a conductive material screen disposed over the substrate and along the limit between the pattern area to be etched and the area not to be etched.

Abstract: A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur.