Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

Abstract: A lithographic apparatus includes an illumination system, support constructed to support patterning device, a projection system, an interferometric sensor and a detector. The interferometric sensor is designed to measure one or more wavefronts of a radiation beam projected by the projection system from an adjustable polarizer. The interferometric sensor includes a diffractive element disposed at a level of a substrate in the lithographic apparatus and a detector spaced apart from the diffractive element, the diffractive element being arranged to provide shearing interferometry between at least two wavefronts mutually displaced in a direction of shear. The detector is designed to determine, from the wavefront measurements, information on polarization affecting properties of the projection system.

Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

Abstract: A grating for EUV-radiation includes a plurality of reflecting lines. Each reflecting line includes a plurality of first reflecting dots, and a plurality of second reflecting dots arranged between each other. The first reflecting dots and the second reflecting dots are configured to reflect EUV-radiation with a mutual phase difference of 180±10 degrees mod 360 degrees.

Abstract: A method for detecting radiation. The radiation detector includes a plurality of Faraday cups. Each Faraday cup being provided with a cover. Each cover comprising a window arrangement through which the radiation may pass into the Faraday cup. The window arrangement of each cover being different for each Faraday cup. Each Faraday cup housing a target configured to emit photoelectrons if the radiation is incident upon the target.

Abstract: A method for detecting radiation. The radiation detector includes a plurality of Faraday cups. Each Faraday cup being provided with a cover. Each cover comprising a window arrangement through which the radiation may pass into the Faraday cup. The window arrangement of each cover being different for each Faraday cup. Each Faraday cup housing a target configured to emit photoelectrons if the radiation is incident upon the target.

Abstract: A radiation detector detects radiation. The radiation detector includes a plurality of Faraday cups. Each Faraday cup being provided with a cover. Each cover comprising a window arrangement through which the radiation may pass into the Faraday cup. The window arrangement of each cover being different for each Faraday cup. Each Faraday cup housing a target configured to emit photoelectrons if the radiation is incident upon the target.

Abstract: A radiation detector detects radiation. The radiation detector includes a plurality of Faraday cups. Each Faraday cup being provided with a cover. Each cover comprising a window arrangement through which the radiation may pass into the Faraday cup. The window arrangement of each cover being different for each Faraday cup. Each Faraday cup housing a target configured to emit photoelectrons if the radiation is incident upon the target.

Abstract: A grating for EUV-radiation includes a plurality of reflecting lines. Each reflecting line includes a plurality of first reflecting dots, and a plurality of second reflecting dots arranged between each other. The first reflecting dots and the second reflecting dots are configured to reflect EUV-radiation with a mutual phase difference of 180±10 degrees mod 360 degrees.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a polarization sensor configured at least in part to couple to a reticle stage, wherein components of the reticle polarization sensor can be loaded and unloaded in the lithographic apparatus in the manner used for conventional reticles. In one configuration an active reticle tool includes a rotatable retarder configured to vary the retardation applied to polarized light received from a field point in the illumination system. In another configuration, a passive reticle tool is configured as an array of polarization sensor modules, where the amount of retardation applied to received light by fixed retarders varies according to position of the polarization sensor module. Accordingly, a plurality of retardation conditions for light received at a given field point can be measured, wherein a complete determination of a polarization state of the light at the given field point can be determined.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a polarization sensor configured at least in part to couple to a reticle stage, wherein components of the reticle polarization sensor can be loaded and unloaded in the lithographic apparatus in the manner used for conventional reticles. In one configuration an active reticle tool includes a rotatable retarder configured to vary the retardation applied to polarized light received from a field point in the illumination system. In another configuration, a passive reticle tool is configured as an array of polarization sensor modules, where the amount of retardation applied to received light by fixed retarders varies according to position of the polarization sensor module. Accordingly, a plurality of retardation conditions for light received at a given field point can be measured, wherein a complete determination of a polarization state of the light at the given field point can be determined.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a polarization sensor configured at least in part to couple to a reticle stage, wherein components of the reticle polarization sensor can be loaded and unloaded in the lithographic apparatus in the manner used for conventional reticles. In one configuration an active reticle tool includes a rotatable retarder configured to vary the retardation applied to polarized light received from a field point in the illumination system. In another configuration, a passive reticle tool is configured as an array of polarization sensor modules, where the amount of retardation applied to received light by fixed retarders varies according to position of the polarization sensor module. Accordingly, a plurality of retardation conditions for light received at a given field point can be measured, wherein a complete determination of a polarization state of the light at the given field point can be determined.

Abstract: A thick pellicle is allowed to have a non-flat shape and its shape is characterized to calculate corrections to be applied in exposures to compensate for the optical effects of the pellicle. The pellicle may be mounted so as to adopt a one-dimensional shape under the influence of gravity to make the compensation easier.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and a detector for measuring the intensity of the radiation after it has passed through the projection system. The apparatus further includes a polarization changing element, such as a quarter-wave plate, that is adjustable; and a polarization analyzer, such as a linear polarizer, wherein the polarization changing element and the polarization analyzer are arranged in order in the radiation beam path at the level at which a patterning device would be held by the support.

Abstract: A system, apparatus, and method for calibrating the reticle of a lithographic system is presented herein. The method includes imaging a reticle through a lithographic system, measuring a set of height offsets based on the imaged reticle and decomposing the set of measured height offsets in accordance with a plurality of distortional factors. The invention further comprises determining the reticle stage deformation attributes based on the distortional factors and the reticle deformation attributes, and then calibrating the reticle stage based on the stage deformation attributes.