Abstract: The present invention relates to a light emitting diode (LED) module (10), comprising at least one LED chip (12) having a surface (13) for emitting light, and a ceramic conversion plate (14). The LED module is characterized in that the ceramic conversion plate includes a first segment (18) covering a first portion of the light emitting surface of the LED chip(s) and a second segment (20) provided alongside the first segment covering a second portion of the light emitting surface of the LED chip(s), wherein at least one of the segments comprises a wavelength-converting material for converting light emitted from the LED chip(s) to a certain wavelength. The present invention also relates to a method for the manufacturing of such an LED module, and a ceramic conversion plate for use in an LED module.

Abstract: The present invention relates to a light-emitting diode (LED) module (10) comprising a first LED chip (12) for emitting light of a first color, a LED element (14) comprising a second LED chip, which element is placed alongside the first LED chip and adapted to emit light of a second color, and a ceramic conversion plate (16). The ceramic conversion plate covers only a portion of the first LED chip and comprises a wavelength-converting material for converting light emitted from the first LED chip to a third wavelength. The size of the portion of the first LED chip that is covered by the ceramic conversion plate is selected so that the LED module produces mixed light of a certain desired color The present invention also relates to a method of manufacturing such a LED module.

Abstract: A display device (100) comprising a plurality of lighting units (101), each lighting unit comprising at least one light emitting diode (202) being provided with a fluorescent element (203) arranged to absorb at least part of the light emitted by said light emitting diode and emit light of a wavelength range different from that of the absorbed light is provided. The fluorescent element (203) comprises at least one phosphor being an europium(II)-activated halogeno-oxonitridosilicate of the general formula EaxSiyN2/3x+4/3y:EuzOaXb.

Abstract: The electric device (100) according to the invention has a resistor comprising a layer (7, 107) of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resistivity. The phase change material is a fast growth material. The electric device (100) further comprises a switching signal generator (400) for switching the resistor between at least three different electrical resistance values by changing a corresponding portion of the layer (7, 107) of the phase change material from the first phase to the second phase.

Abstract: The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The body (2, 102) further has a heating element (6, 106) being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (6, 106) is arranged in parallel with the resistor (7, 107).

Abstract: The invention relates to a ferroelectric device (10) with a body (11) comprising a substrate (1) and a ferroelectric layer (2) provided with a connection conductor (3) on a side facing away from the substrate (1), which ferroelectric layer contains an oxygen-free ferroelectric material (2) and is used to form an active electrical element (4), in particular a memory element (4). Such a device forms an attractive non-volatile memory device. In accordance with the invention, a conductive layer (5) is present between the substrate (1) and the ferroelectric layer (2), which conductive layer forms a further connection conductor (5) of the ferroelectric layer (2), and the active electrical element (4) is obtained as a result of the fact that the ferroelectric layer (2) forms a Schottky junction with at least one of the connection conductors (3, 5).

Abstract: The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The phase change material constitutes a conductive path between a first contact area and a second contact area. A cross-section of the conductive path is smaller than the first contact area and the second contact area. The body (102) may further have a heating element 106 being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (106) is preferably arranged in parallel with the resistor (107).

Abstract: A low-pressure mercury-vapor discharge lamp is provided with a discharge vessel (10). The discharge vessel (10) encloses a discharge space (11) provided with a filling of mercury and an inert gas in a gastight manner. The discharge vessel (10) is provided with an amalgam which communicates with the discharge space (11). The discharge lamp comprises means for maintaining an electric discharge in the discharge vessel (10). The discharge lamp is characterized in that the amalgam comprises a bismuth-lead amalgam having a lead content in the range from 35≦Pb≦60 at. %, a bismuth content in the range from 40≦Bi≦65 at. %, and a mercury content in the range from 0.05≦Hg≦1 at. %. Preferably, the amalgam additionally comprises gold with a gold content in the range from 0.1≦Au≦20 at. %. Preferably, the gold content is in the range from 8≦Au≦12 at. %.

Abstract: A description is given of a rewritable optical data storage medium having a phase-change recording layer on the basis of an alloy of Ga-In-Sb, which composition is situated within the pentagonal area TUVW in a triangular ternary composition diagram. These alloys show an amorphous phase stability of 10 year or more at 30° C. Such a medium is suitable for high speed recording, e.g. at least 30 Mbits/sec, such as DVD+RW, DVD−RW, DVD-RAM, high speed CD-RW, DVR-red and DVR-blue.

Abstract: A low-pressure mercury-vapor discharge lamp is provided with a discharge vessel (10). The discharge vessel (10) encloses a discharge space (11) provided with a filling of mercury and an inert gas in a gastight manner. The discharge vessel (10) is provided with an amalgam which communicates with the discharge space (11). The discharge lamp comprises means for maintaining an electric discharge in the discharge vessel (10). The discharge lamp is characterized in that the amalgam comprises a bismuth-lead amalgam having a lead content in the range from 35≦Pb≦60 at. %, a bismuth content in the range from 40≦Bi≦65 at. %, and a mercury content in the range from 0.05≦Hg≦1 at. %. Preferably, the amalgam additionally comprises gold with a gold content in the range from 0.1≦Au≦20 at. %. Preferably, the gold content is in the range from 8≦Au≦12 at. %.