Abstract: The method according to the invention is directed to manufacturing an electric device (100) according to the invention, having a body (102) with a resistor comprising a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance different from the first electrical resistance when the phase change material is in the second phase. The resistor is a nanowire (NW) electrically connecting a first conductor (172, 120) and a second conductor (108, 121). The method comprises the step of providing a body (102) having the first conductor (172, 120), providing the first conductor (172, 120) with the nanowire (NW) thereby electrically connecting the nanowire (NW) and the first conductor (172, 120), and providing the nanowire (NW) with the second conductor (108, 121) thereby electrically connecting the nanowire (NW) and the second conductor (108, 121).

Abstract: A backlight uses an array of red, green, and blue LEDs in a mixing chamber. The mixing chamber has reflecting surfaces and a top opening for illuminating LCD layers. The LEDs are arranged in clusters of red, green, and blue LEDs, where there are at least two types of clusters used in the backlight for improved color uniformity across the LCD screen. Examples of a set of two clusters are RGBBGR with BGRRGB, and GRBRG with RGBGR. In one embodiment, clusters of one type form alternate rows in the array, and clusters of the other type form interleaved rows. In another embodiment, the cluster types in a row alternate, and the cluster types in a column alternate like a checkerboard to improve color uniformity. In one embodiment, there is an odd number of rows so that the same cluster type will be at the four corners of the array. Currents to the red, green, and blue LEDs adjust the white point of the display.

Abstract: The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The body (2, 102) further has a heating element (6, 106) being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (6, 106) is arranged in parallel with the resistor (7, 107).

Abstract: The electric device (1, 100) comprises a resistor (36, 250) comprising a phase change material which is able to be in a first phase and in a second phase. The resistor (36, 250) has an electrical resistance which has a first value when the phase change material is in the first phase and a second value when the phase change material is in the second phase. The resistor (36, 250) is electrically connected to a first conductor (3, 130A, 130B) and a second conductor (4, 270), which are able to conduct a current for heating of the phase change material to enable a transition from the first phase to the second phase. The electric device (1, 100) further comprises a layer (20, 39, 126, 140, 260) of a dielectric material for reducing a heat flow to parts of the body (2, 101) free of the resistor (36, 250) during the heating, which dielectric material according to the invention comprises a porous material with pores having a size between 0.5 and 50 nm.

Abstract: The electric device (1, 100) has a body (2, 101) with a resistor (7, 250) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 250) has an electric resistance which depends on whether the phase change material is in the first phase or the second phase. The resistor (7, 250) is able to conduct a current for enabling a transition from the first phase to the second phase. The phase change material is a fast growth material which may be a composition of formula Sb1-cMc with c satisfying 0.05?c?0.61, and M being one or more elements selected from the group of Ge, In, Ag, Ga, Te, Zn and Sn, or a composition of formula SbaTebX100-(a+b) with a, b and 100-(a+b) denoting atomic percentages satisfying 1?a/b?8 and 4?100-(a+b)?22, and X being one or more elements selected from Ge, In, Ag, Ga and Zn.

Abstract: The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The phase change material constitutes a conductive path between a first contact area and a second contact area. A cross-section of the conductive path is smaller than the first contact area and the second contact area. The body (102) may further have a heating element 106 being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (106) is preferably arranged in parallel with the resistor (107).

Abstract: The invention relates to a ferroelectric device (10) with a body (11) comprising a substrate (1) and a ferroelectric layer (2) provided with a connection conductor (3) on a side facing away from the substrate (1), which ferroelectric layer contains an oxygen-free ferroelectric material (2) and is used to form an active electrical element (4), in particular a memory element (4). Such a device forms an attractive non-volatile memory device. In accordance with the invention, a conductive layer (5) is present between the substrate (1) and the ferroelectric layer (2), which conductive layer forms a further connection conductor (5) of the ferroelectric layer (2), and the active electrical element (4) is obtained as a result of the fact that the ferroelectric layer (2) forms a Schottky junction with at least one of the connection conductors (3, 5).

Abstract: A rewritable optical data storage medium (20) for high-speed recording by means of a focused radiation beam (10) is described. The medium (20) comprises a substrate (1) carrying a stack (2) of layers. The stack (2) comprises a first dielectric layer (3), a second dielectric layer (5), and a recording layer (4) of a phase-change material of an alloy comprising Sb and Te. The recording layer (4) is interposed between the first dielectric layer (3) and the second dielectric layer (5). The alloy additionally contains 2-10 at. % of Ga, by which a significant improvement of the maximum data rate during direct overwrite is achieved. By furthermore adding 0.5-4.0% of Ge to the alloy the archival life stability is enhanced.

Abstract: A rewritable optical data storage medium (20) for high-speed recording by means of a focused radiation beam (10) is described. The medium (20) comprises a substrate (1) carrying a stack (2) of layers, which stack (2) comprises, a first auxiliary layer (3), a second auxiliary layer (5), and a recording layer (4) of a phase-change material mainly comprising an alloy of Sb and at least one of Ga and In. The recording layer (4) is interposed between the first auxiliary layer (3) and the second auxiliary layer (5). If the alloy is of a composition in atomic percentages defined by the formula: GaxInySbz and 70=z=95 and x+y+z=100 the recording layer (4) has a crystallization speed making it suitable for direct overwrite high speed recording at a velocity of more than 10 m/s and an archival life stability of at least 10 years at 30° C. Further the recording layer (4) has a relatively low media noise.