Abstract: A method of measuring thickness of a material generally includes applying an oscillating signal to a first electrode at a fixed frequency, passing the signal through the material to a second electrode, and measuring the magnitude of the signal reflected back to the first electrode. The thickness of the material is determined based on the measured magnitude of the reflected signal by: 1) comparing the determined magnitude to a predetermined baseline to establish a difference; and 2) identifying the thickness based on the difference. Related apparatuses are also disclosed. The material may be a vehicle tire.

Abstract: A method of measuring thickness of a material generally includes applying an oscillating signal to a first electrode at a fixed frequency, passing the signal through the material to a second electrode, and measuring the magnitude of the signal reflected back to the first electrode. The thickness of the material is determined based on the measured magnitude of the reflected signal by: 1) comparing the determined magnitude to a predetermined baseline to establish a difference; and 2) identifying the thickness based on the difference. Related apparatuses are also disclosed. The material may be a vehicle tire.

Abstract: Methods of measuring thickness of a material using cross-capacitance. The method generally includes applying a time-varying signal to a first pad and monitoring a response of a capacitor formed by the first pad, a spaced apart second pad, and the material. The pads may be permanently affixed to the material, in spaced relation to each other. Based on the response, a capacitance of the capacitor is determined. The material may be homogenous or heterogeneous, and has dielectric properties. Because the material acts as a dielectric, the capacitance of the capacitor changes as the thickness of the material changes. Thus, the thickness of the material may be determined based on the determined capacitance. The method may be advantageously employed to measure the thickness of a vehicle tire or other material. Related apparatuses are also disclosed.

Abstract: Methods of measuring thickness of a material using cross-capacitance. The method generally includes applying a time-varying signal to a first pad and monitoring a response of a capacitor formed by the first pad, a spaced apart second pad, and the material. The pads may be permanently affixed to the material, in spaced relation to each other. Based on the response, a capacitance of the capacitor is determined. The material may be homogenous or heterogeneous, and has dielectric properties. Because the material acts as a dielectric, the capacitance of the capacitor changes as the thickness of the material changes. Thus, the thickness of the material may be determined based on the determined capacitance. The method may be advantageously employed to measure the thickness of a vehicle tire or other material. Related apparatuses are also disclosed.

Abstract: Disclosed is a bi-directional optical link and method to facilitate bi-directional optical communications with a single optical fiber. Briefly described, the bi-directional optical link comprises a thin film detector having an upper surface facing a predetermined direction to receive incident light. Also, the link includes a thin film emitter stacked over the upper surface and oriented to direct a beam of light toward the predetermined direction. The thin film detector is relatively wide and flat, where the thin film emitter can be placed on the thin film detector while occluding only a portion of the thin film detector. Thus, the thin film detector can receive incident light from a single optical fiber facing the emitter/detector from the predetermined direction while at the same time emitting a beam of light into the same single optical fiber.

Abstract: A learning neural network (30) implements a random weight change learning algorithm within a weight adjustment mechanism (28) for manipulating the weights applied to inputs of the network (30) in order to achieve a desired functionality for the network (30). Weights are changed randomly from an initial state with a small incremental weight change of either +.delta. or -.delta.. If the overall network output decreases by the weight change, the same weight change is iterated until the error increases. If, however, the overall network error increases, the weights are changed randomly again. After iterating the foregoing methodology, the network error gradually decreases and finally reaches approximately zero. Furthermore, a shift mechanism (36) and a multiplier (38) are employed as a weight application mechanism (16). The shift mechanisms (36) are connected in series with a random line (35) and are connected in parallel with a shift line (44).

Abstract: Various novel lift-off and bonding processes (60, 80, 100) permit lift-off of thin film materials and devices (68), comprising In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y where 0<x<1, and 0<y<1, from a growth substrate (62) and then subsequent alignable bonding of the same to a host substrate (84). As a result, high quality communication devices can be fabricated for implementing a three dimensional electromagnetic communication network within a three dimensional integrated circuit cube (10), an array (90) of optical detectors (98) for processing images at very high speed, and a micromechanical device (110) having a platform (114) for steering or sensing electromagnetic radiation or light.

Abstract: Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lift off, alignment, and deposition onto a host substrate. One process involves the following steps. An epitaxial layer(s) is deposited on a sacrificial layer situated on a growth substrate. Device layers may be defined in the epitaxial layer. All exposed sides of the epitaxial layer is coated with a transparent carrier layer. The sacrificial layer is then etched away to release the combination of the epitaxial layer and the transparent carrier layer from the growth substrate. The epitaxial layer can then be aligned and selectively deposited onto a host substrate. Finally, the transparent carrier layer is removed, thereby leaving the epitaxial layer on the host substrate. An alternative process involves substantially the same methodology as the foregoing process except that the growth substrate is etched away before the sacrificial layer.

Abstract: Three dimensional communication within an integrated circuit occurs via electromagnetic communication between emitters and detectors situated throughout the integrated circuit. The emitters and detectors can be produced in a diode or laser configuration. The emitters and detectors can be fabricated via novel lift-off and alignable deposition processes. Integrated circuit layers, including silicon and gallium arsenide, are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.

Abstract: Various novel processes permit integrating thin film semiconductor materials and devices using lift off, alignment, and deposition onto a host substrate. As a result, three dimensional integrated circuits can be constructed. Three dimensional communication in an integrated circuit can be implemented via electromagnetic communication between emitters and detectors fabricated via the novel processes. Integrated circuit layers are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.