Abstract: The present invention provides a soft lithographic stamp (30) and a method for the manufacturing of such a stamp (30). A stamp (30) according to the present invention comprises blocking regions (37) and printing regions (38). The blocking regions (37) are formed of a material which is different from the material the printing regions (38) are formed of and which exhibits a reduced permeability, diffusivity or absorbing or adsorbing capability to the printing compound, such that it prevents or significantly reduces chemical or physical transport or transfer of the printing compound from the blocking regions to a substrate that has to be patterned or printed.

Abstract: The invention relates to micro-contact printing, wherein a self-assembled monolayer(SAM)-forming molecular species (1) is applied to a surface (2) of an article (3). The SAM-forming species (1) comprise a polar functional group that is exposed when the species (1) form a monolayer. This enables said printing method to be performed in vacuum or in a gaseous atnosphere, preferably in air. The invention also relates to an article having a surface comprising at least one isolated region of a SAM having a lateral dimension within the range of from 1 to 100 nm. Furthermore, the invention relates to a method for producing at least one nanowire, or a grid of nanowires, having a lateral dimension within the range of from 1 to 100 nm.

Abstract: The invention relates to a method for transferring a pattern from a stamping surface (31) of a stamp (30) to a receiving surface (21) of a substrate (20). The pattern is transferred to the receiving surface (21) by successively bringing portions of the pattern within such a range of the receiving surface (21) during a certain period, that the pattern is locally transferred from the stamping surface (31) to the receiving surface (21). The individual portions can be moved by means of individual actuators (50). By applying the method, the transfer of the pattern can be performed according to a wave, which is for example ring-shaped, moving from the center of the receiving surface (21) to the circumference, or linear, moving from side of the receiving surface (21) to an opposite side.

Abstract: A method for creating a source and a drain of a thin film transistor is disclosed. The method comprises the step (106) of forming a mask of a monolayer on a substrate. The mask will be used for selective electroless deposition of a metal layer (108). Thus, a metal layer could be grown in the areas where no monolayer is present. As a result, the grown metal layer could form a source and a drain with a gap in-between, where the monolayer has prevented deposition.