Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: Rf power is supplied to a vacuum processing module in that in the plasma processing module a time invariant impedance transform is performed by an impedance transform network in the plasma processing module and a time variable matching is performed by a matchbox connected to the impedance transform network. The impedance transform network includes an inductive element of a hollow conductor. A cooling medium is flown through the hollow conductor of the impedance transform network as well as through a part of the plasma processing module to be cooled and not being part of the impedance transform network at the plasma processing module.

Abstract: For vacuum treatment, a substrate is transported to the inner space of a hollow, cylindric body and is deposited on a holding plate and lifted towards and on a substrate support. The opening of the substrate support is aligned with an opening in the wall of the hollow cylindric body. Substrate plate, substrate support and opening are brought in aligned position with a treatment station, by rotating the hollow cylindric body around its axis, in which position the substrate is vacuum treated.

Abstract: Rf power is supplied to a vacuum processing module in that in the plasma processing module a time invariant impedance transform is performed by an impedance transform network in the plasma processing module and a time variable matching is performed by a matchbox connected to the impedance transform network. The impedance transform network includes an inductive element of a hollow conductor. A cooling medium is flown through the hollow conductor of the impedance transform network as well as through a part of the plasma processing module to be cooled and not being part of the impedance transform network at the plasma processing module.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: The soft magnetic material multilayer deposition apparatus includes a circular arrangement of a multitude of substrate carriers in a circular inner space of a vacuum transport chamber. In operation the substrate carriers pass treatment stations. One of the treatment stations has a sputtering target made of a first soft magnetic material. A second treatment station includes a target made of a second soft magnetic material which is different from the first soft magnetic material of the first addressed target. A control unit controlling relative movement of the substrate carriers with respect to the treatment stations provides for more than one 360° revolution of the multitude of substrate carriers around the axis AX of the circular inner space of the vacuum transport chamber, while the first and second treatment stations are continuously operative.

Abstract: A vacuum adapter for feeding-through vacuum-insulated coolant lines (11, 12, 22, 23) from the surrounding atmosphere into a vacuum processing installation has an intermediate volume (2) which is connected firstly to at least one insulation intermediate space (32, 33) of the vacuum-insulated feed lines and secondly to a vacuum pump. The pump capacity is available at least temporarily for evacuating the insulation intermediate space around the coolant lines (22, 23).

Abstract: A vacuum adapter for feeding-through vacuum-insulated coolant lines from the surrounding atmosphere into a vacuum processing installation has an intermediate volume which is connected firstly to at least one insulation intermediate space of the vacuum-insulated feed lines and secondly to a vacuum pump. The pump capacity is available at least temporarily for evacuating the insulation intermediate space around the coolant lines.

Abstract: A vacuum adapter for feeding-through vacuum-insulated coolant lines (11, 12, 22, 23) from the surrounding atmosphere into a vacuum processing installation has an intermediate volume (2) which is connected firstly to at least one insulation intermediate space (32, 33) of the vacuum-insulated feed lines and secondly to a vacuum pump. The pump capacity is available at least temporarily for evacuating the insulation intermediate space around the coolant lines (22, 23).