Abstract: An uncooled microbolometer detector that includes a substrate, a platform held above the substrate by a support structure, at least one thermistor provided on the platform, and an optical absorber. The optical absorber includes at least one electrically conductive layer extending on the platform over and in thermal contact with the at least one thermistor and patterned to form a resonant structure defining an absorption spectrum of the uncooled microbolometer detector. The optical absorber is exposed to electromagnetic radiation and absorbs the electromagnetic radiation according to the absorption spectrum. A microbolometer array including a plurality of uncooled microbolometer detectors arranged in a two-dimensional array is also provided. Advantageously, these embodiments allow extending the absorption spectrum of conventional infrared uncooled microbolometer detectors to the terahertz region of the electromagnetic spectrum.

Abstract: An uncooled microbolometer detector that includes a substrate, a platform held above the substrate by a support structure, at least one thermistor provided on the platform, and an optical absorber. The optical absorber includes at least one electrically conductive layer extending on the platform over and in thermal contact with the at least one thermistor and patterned to form a resonant structure defining an absorption spectrum of the uncooled microbolometer detector. The optical absorber is exposed to electromagnetic radiation and absorbs the electromagnetic radiation according to the absorption spectrum. A microbolometer array including a plurality of uncooled microbolometer detectors arranged in a two-dimensional array is also provided. Advantageously, these embodiments allow extending the absorption spectrum of conventional infrared uncooled microbolometer detectors to the terahertz region of the electromagnetic spectrum.

Abstract: A manganese-implanted silicon substrate exhibits ferromagnetism and a Curie temperature above room temperature when magnetized. The implant is done at a temperature of between about 250 C and about 800 C, while the manganese concentration is between about 0.01 atomic percent and 10 atomic percent. The silicon substrate can be p- or n-type with a doping concentration between 1015 and 1021 cm?3. Annealing may be done to increase the saturation magnetization.

Abstract: A manganese-implanted silicon substrate exhibits ferromagnetism and a Curie temperature above room temperature when magnetized. The implant is done at a temperature of between about 250 C and about 800 C, while the manganese concentration is between about 0.01 atomic percent and 10 atomic percent. The silicon substrate can be p- or n-type with a doping concentration between 1015 and 1021 cm?3. Annealing may be done to increase the saturation magnetization.