Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes abrasive machining a first portion of the opening into the substrate from the second side toward the first side, and abrasive machining a second portion of the opening into the substrate from the first side toward the second side. Abrasive machining one of the first or second portion includes communicating the first or second portion with the. other of the first or second portion to form the opening through the substrate.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes abrasive machining a first portion of the opening into the substrate from the second side toward the first side, and abrasive machining a second portion of the opening into the substrate from the first side toward the second side. Abrasive machining one of the first or second portion includes communicating the first or second portion with the other of the first or second portion to form the opening through the substrate.

Abstract: A semiconductor substrate includes electronic circuitry and has a machined feature formed therein. The semiconductor substrate is formed by a process which includes providing the semiconductor substrate having the electronic circuitry formed therein, and performing a machining process on the substrate to form the machined feature therein. The machined feature includes a slot and the machining process forms cracks at ends of the slot that reduce a fracture strength of the substrate. Removing portions of the semiconductor substrate proximate the cracks such that end points of the cracks have a curved terminus as formed by the removed portions improves the fracture strength of the substrate.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes abrasive machining a first portion of the opening into the substrate from the second side toward the first side, and abrasive machining a second portion of the opening into the substrate from the first side toward the second side. Abrasive machining one of the first or second portion includes communicating the first or second portion with the other of the first or second portion to form the opening through the substrate.

Abstract: A method of processing a semiconductor substrate to increase fracture strength and a semiconductor substrate formed by that method. In a preferred embodiment, the semiconductor substrate is utilized in a printhead. The semiconductor substrate has a feature such as an ink feed channel machined therein, and following machining the die is processed to remove material adjacent the machined feature to reduce micro-cracks or other defects that may have been created during the feature machining process. The crack containing material may be removed by several procedures. A preferred procedure is etching with a solution containing TMAH.

Abstract: A method of processing a semiconductor substrate to increase fracture strength and a semiconductor substrate formed by that method. In a preferred embodiment, the semiconductor substrate is utilized in a printhead. The semiconductor substrate has a feature such as an ink feed channel machined therein, and following machining the die is processed to remove material adjacent the machined feature to reduce micro-cracks or other defects that may have been created during the feature machining process. The crack containing material may be removed by several procedures. A preferred procedure is etching with a solution containing TMAH.