Patents by Inventor Martin CORNILS

Martin CORNILS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11131722
    Abstract: An apparatus (10) for checking a component (30) is disclosed. The apparatus (10) comprises a sample holder (20) with a module (28) for receiving at least one component (30), at least one magnetic field generator (60a, 60b, 60c) for generating a magnetic field around the module (28), an inlet (40) for feeding a tempered medium into the module (25), and an outlet (45) for discharging a tempered medium from the module (28).
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: September 28, 2021
    Assignee: Micronas GmbH
    Inventors: Oliver Kawaletz, Martin Cornils
  • Patent number: 11125838
    Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: September 21, 2021
    Assignee: TDK-Micronas GmbH
    Inventors: Martin Cornils, Maria-Cristina Vecchi
  • Patent number: 11114501
    Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: September 7, 2021
    Assignee: TDK-Micronas GmbH
    Inventors: Christian Sander, Martin Cornils
  • Patent number: 11005033
    Abstract: A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: May 11, 2021
    Assignee: TDK-Micronas GmbH
    Inventors: Martin Cornils, Maria-Cristina Vecchi
  • Publication number: 20210003641
    Abstract: A vertical Hall sensor structure having a substrate layer, a semiconductor area of a first conductivity type, at least a first, a second and a third semiconductor contact area of the first conductivity type extending from an upper surface of the semiconductor area into the semiconductor area, and at least a first semiconductor contact area of a second conductivity type, wherein the semiconductor contact areas of the first conductivity type are spaced apart from each other and a metal connection contact layer is arranged on each semiconductor contact area of the first conductivity type. The first semiconductor contact area of the second conductivity type is adjacent to the first semiconductor contact area of the first conductivity type or is spaced at a distance of at most 0.2 ?m from the first semiconductor contact area of the first conductivity type.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 7, 2021
    Applicant: TDK-Micronas GmbH
    Inventors: Maria-Cristina VECCHI, Reinhard ERWE, Martin CORNILS, Kerwin KHU
  • Publication number: 20200393523
    Abstract: An isolating Hall sensor structure having a support structure made of a substrate layer and an oxide layer, a semiconductor region of a first conductivity type which is integrally connected to a top side of the oxide layer, at least one trench extending from the top side of the semiconductor region to the oxide layer of the support structure, at least three first semiconductor contact regions of the first conductivity type, each extending from a top side of the semiconductor region into the semiconductor region. The at least one trench surrounds a box region of the semiconductor region. The first semiconductor contact regions are each arranged in the box region of the semiconductor region and are each spaced apart from one another. A metallic connection contact layer is arranged on each first semiconductor contact region.
    Type: Application
    Filed: June 10, 2020
    Publication date: December 17, 2020
    Applicant: TDK-Micronas GmbH
    Inventors: Maria-Cristina VECCHI, Reinhard ERWE, Martin CORNILS, Kerwin KHU
  • Publication number: 20200365796
    Abstract: A Hall sensor structure comprising a semiconductor body of a first conductivity type, a well region of a second conductivity type extending from a top side of the semiconductor body into the semiconductor body, at least three first semiconductor contact regions of the second conductivity type, each extending from a top side of the well region into the well region, at least one second semiconductor contact region of a second conductivity type, wherein the first semiconductor contact regions are spaced apart from one another and from an edge of the well region, a metallic connection contact layer is arranged on each first semiconductor contact region, the at least one second semiconductor contact region extends along the top side of the semiconductor body at least partially around the well region.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 19, 2020
    Applicant: TDK-Micronas GmbH
    Inventors: Maria-Cristina VECCHI, Reinhard ERWE, Martin CORNILS, Kerwin KHU
  • Publication number: 20200256931
    Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.
    Type: Application
    Filed: January 14, 2020
    Publication date: August 13, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Martin CORNILS, Maria-Cristina VECCHI
  • Publication number: 20200227627
    Abstract: A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.
    Type: Application
    Filed: January 14, 2020
    Publication date: July 16, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Martin CORNILS, Maria-Cristina VECCHI
  • Publication number: 20200200836
    Abstract: An apparatus (10) for checking a component (30) is disclosed. The apparatus (10) comprises a sample holder (20) with a module (28) for receiving at least one component (30), at least one magnetic field generator (60a, 60b, 60c) for generating a magnetic field around the module (28), an inlet (40) for feeding a tempered medium into the module (25), and an outlet (45) for discharging a tempered medium from the module (28).
    Type: Application
    Filed: December 18, 2019
    Publication date: June 25, 2020
    Inventors: Oliver Kawaletz, Martin Cornils
  • Publication number: 20200166588
    Abstract: A semiconductor sensor structure that includes a first and a second semiconductor wafer. The second semiconductor wafer has a substrate with integrated circuit with at least one metallic terminal contact, and the first semiconductor wafer has a semiconductor layer of a second conductivity type with a three-dimensional Hall sensor structure with a sensor region and at least three first metallic terminal contacts that are spaced apart from one another are formed on a front, and at least three second metallic terminal contacts that are spaced apart from one another are formed on a back. The terminal contacts are each formed on a highly doped semiconductor contact region of a second conductivity type and are arranged at an offset from the second terminal contacts in a projection perpendicular to the front.
    Type: Application
    Filed: November 26, 2019
    Publication date: May 28, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Martin CORNILS, Maria-Cristina VECCHI
  • Publication number: 20200161537
    Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.
    Type: Application
    Filed: November 21, 2019
    Publication date: May 21, 2020
    Applicant: TDK-MICRONAS GMBH
    Inventors: Christian SANDER, Martin CORNILS
  • Patent number: 9851419
    Abstract: A Hall sensor including multiple Hall elements which have a first terminal contact and a second terminal contact and a third terminal contact, the multiple Hall elements being electrically connected in series. The first terminal contacts and the third terminal contacts of the individual Hall elements are connected to each other, and the second terminal contacts of the Hall elements are supply voltage terminals or as Hall voltage taps. A beginning of a first branch being electrically connected in series to an end of a second branch, in such a way that the direction of the current flow through the Hall elements of the first branch is counter to the direction of the current flow through the Hall elements of the second branch.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: December 26, 2017
    Assignee: TDK-Micronas GmbH
    Inventors: Maria-Cristina Vecchi, Martin Cornils
  • Patent number: 9581658
    Abstract: A hall effect sensor device implemented on a semiconductor body, having a first Hall effect sensor and a second Hall effect sensor, each of the two Hall effect sensors has at least four individual Hall effect elements and the four Hall effect elements are connected in series, and each Hall effect element has three contact terminals arranged in a row, and the series connection is implemented through a coupling or interconnection of the two outer contact terminals. Semiconductor well regions of the individual Hall effect elements are separated from one another, and the first Hall effect sensor and the second Hall effect sensor are connected in parallel, whereby a middle contact terminal of a Hall effect element of the first Hall effect sensor is connected in each case with a middle contact terminal of a Hall effect element of the second Hall effect sensor.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: February 28, 2017
    Assignee: Micronas GmbH
    Inventors: Martin Cornils, Christian Sander
  • Publication number: 20150331068
    Abstract: A Hall sensor including multiple Hall elements which have a first terminal contact and a second terminal contact and a third terminal contact, the multiple Hall elements being electrically connected in series. The first terminal contacts and the third terminal contacts of the individual Hall elements are connected to each other, and the second terminal contacts of the Hall elements are supply voltage terminals or as Hall voltage taps. A beginning of a first branch being electrically connected in series to an end of a second branch, in such a way that the direction of the current flow through the Hall elements of the first branch is counter to the direction of the current flow through the Hall elements of the second branch.
    Type: Application
    Filed: May 19, 2015
    Publication date: November 19, 2015
    Applicant: Micronas GmbH
    Inventors: Maria-Cristina VECCHI, Martin CORNILS
  • Publication number: 20150115950
    Abstract: A hall effect sensor device implemented on a semiconductor body, having a first Hall effect sensor and a second Hall effect sensor, each of the two Hall effect sensors has at least four individual Hall effect elements and the four Hall effect elements are connected in series, and each Hall effect element has three contact terminals arranged in a row, and the series connection is implemented through a coupling or interconnection of the two outer contact terminals. Semiconductor well regions of the individual Hall effect elements are separated from one another, and the first Hall effect sensor and the second Hall effect sensor are connected in parallel, whereby a middle contact terminal of a Hall effect element of the first Hall effect sensor is connected in each case with a middle contact terminal of a Hall effect element of the second Hall effect sensor.
    Type: Application
    Filed: October 29, 2014
    Publication date: April 30, 2015
    Inventors: Martin CORNILS, Christian SANDER