Abstract: The disclosed and claimed subject matter relates to (1) a process for performing thermal atomic layer etching (ALE) of films that include ZrO2, HfO2, (Hf—Zr)O2 alloy or similar materials which does not require the use of plasmas or corrosive halogenating chemistries and (2) a metal-insulator-metal capacitor (MIMcap) with unique properties enabled by a unique dielectric processing method.

Abstract: The disclosed and claimed subject matter relates to selective thermal atomic layer etching with a novel series of halogen-free organic acids cycled with an oxidant as a co-reactant to etch metals.

Abstract: Techniques for creating a high aspect feature and testing the efficacy of a gas-phase deposition process are provided. An example of a method for thin film deposition in a high aspect ratio feature includes preparing a first substrate for a material deposition process, depositing a plurality of spacers on a top surface of the first substrate, disposing a bottom surface of a second substrate on the plurality of spacers, and performing a gas-phase material deposition on the first substrate and the second substrate.