Abstract: In a cleaning process for removing parasitic depositions on surfaces of a process chamber of a CVD reactor, a susceptor of the CVD reactor is heated by a heating device, and the susceptor is regulated to a specified temperature or is heated with a constant heat output. Concurrently, an etching gas is supplied to the heated process chamber. The thermal response of at least one object is monitored, in which the thermal response is the temperature of the wide face of a process chamber cover, the wide face facing away from the process chamber. The parasitic depositions influence the emissivity of the surface of the process chamber cover, the emissivity influencing the temperature distribution in the process chamber. The supply of etching gas is terminated when the temperature reaches a comparison value, the temperature changing in response to changes in the surface emissivity during the cleaning process.

Abstract: A gas distribution device has a plurality of gas inlet regions that are arranged above each other and can be adjusted by switching on or off respective valves. The gas inlet regions can also be adjusted by switching over one or more feed conduits through which process gases can be fed into respective gas distribution volumes of gas outlet zones. The respective gas distribution volumes are arranged above each other at several levels. Only one uniform process gas can exit into a process chamber through each of the gas inlet regions.

Abstract: A device for transporting a substrate includes a ring-shaped body at least partially surrounding a ring opening. The ring-shaped body includes a first section protruding radially outwards in relation to the ring opening and a second section protruding radially inwards. The first and second sections each have heat transfer properties that determine an axial heat transfer through the sections with an axial temperature difference in relation to a normal of the surface of the ring opening. At least one of the heat transfer properties of the first and second sections is different from one another such that the heat flowing through a unit area element in the axial direction is lower in the first section than in the second section.

Abstract: In a method for depositing layers on one or more substrates arranged in a process chamber, at least one carbon-containing gaseous source material is used in at least one deposition step. During layer growth on the one or more substrates, parasitic coatings are also deposited on the wall surfaces of the process chamber. After removing the one or more substrates from the process chamber, a gas flow containing one or more cleaning gases is introduced into the process chamber and the process chamber is heated to a cleaning temperature. The parasitic coatings are transformed into volatile substances, which are removed from the process chamber with the gas flow. To remove a carbon-containing residue on the wall surfaces, an ammonia cleaning step is performed in which the carbon-containing residue reacts with ammonia to form a volatile compound which is removed from the process chamber with the gas flow.

Abstract: The invention relates to a method for depositing layers, in particular of elements of the III and V, the II and VI or the IV main group on one or a plurality of substrates (7) arranged in a process chamber (6) of a CVD reactor, wherein at least one carbon-containing gaseous source material is used in at least one deposition step, wherein parasitic coatings are also deposited on the wall surfaces (5, 8) of the process chamber (6) during the layer growth on the one or plurality of substrates, wherein, after removal of the one or plurality of substrates (7) from the process chamber, the parasitic coatings react in a cleaning process, as a result of the introduction of a gas flow containing one or a plurality of cleaning gases and heating of the process chamber (6) to a cleaning temperature, into volatile substances, which are transported out of the process chamber (6) with the gas flow.